Lattice matchable alloy for solar cells
AssigneeSolar Junction Corporation
InventorsRebecca Elizabeth Jones, Homan Bernard Yuen, Ting Liu, Pranob Misra
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Abstract
An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content, and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07≦x≦0.18, 0.025≦y≦0.04 and 0.001≦z≦0.03.
Claims6
A multijunction solar cell comprising:
- at least one subcell comprising Ga1-xInxNyAs1-y-zSbz, the at least one subcell having a low antimony (Sb) content and enhanced indium (In) content and enhanced nitrogen (N) content, wherein the content levels are selected to achieve a bandgap of at least 0.9 eV, wherein the content values for x, y, and z are within compositions ranges as follows:
- 0.14≦x≦0.18, 0.025≦y≦0.04 and 0.001≦z≦0.03, wherein low corresponds to the content value for z and enhanced corresponds to the content value for x.
Dependencies are inferred from the claim text.