TOPCon cell, method for manufacturing the same, and electrical device

A method for manufacturing a TOPCon cell, comprising the following steps:

• texturing a front side of an N-type silicon wafer and then preparing a PN junction;
• forming a tunnel oxide layer, an intrinsic polysilicon layer, a doped polysilicon layer, and a silicon oxide mask layer in sequence on a back side of the silicon wafer, wherein forming the intrinsic polysilicon layer and the doped polysilicon layer also results in formation of a wraparound polysilicon layer material on the front side of the silicon wafer, and forming the silicon oxide mask layer also results in formation of a wraparound silicon oxide mask layer material on the front side of the silicon wafer, wherein the tunnel oxide layer is deposited by PEALD at a deposition temperature of 150° C. to 200° C., the doped polysilicon layer is deposited by PECVD, and the silicon oxide mask layer has a thickness of 10 nm to 40 nm;
• removing the wraparound silicon oxide mask layer material and the wraparound polysilicon layer material from the front side of the silicon wafer, and then removing the silicon oxide mask layer from the back side;
• and
• forming a front electrode on the PN junction and a back electrode on the doped polysilicon layer, respectively.