Optical device and method

An optical device comprising:

• a gallium and nitrogen containing substrate member having a backside surface and an upper surface;
• a plurality of hexagonal shaped pyramid structures spatially disposed along the backside surface, each of the hexagonal shaped pyramid structures extending from a crystalline structure of the gallium and nitrogen containing substrate member;
• an interior region disposed between a pair of the plurality of hexagonal shaped pyramid structures;
• and a plurality of nanodots spatially disposed overlying the interior region and overlying a surface region of each of the hexagonal shaped pyramid structures and configured to direct electromagnetic radiation towards the active region to increase an absorption of the radiation into the active region, and thereby coupling additional radiation into the active region.

A photo diode device comprising:

• a gallium and nitrogen containing substrate member having a backside surface and an upper surface;
• wherein the backside surface of the gallium and nitrogen containing substrate comprises:
• a plurality of hexagonal shaped pyramid structures spatially disposed along the backside surface, each of the hexagonal shaped pyramid structures extending from a crystalline structure of the gallium and nitrogen containing substrate member;
• and
• an interior region disposed between a pair of the plurality of hexagonal shaped pyramid structures;
• and a plurality of nanodots spatially disposed overlying the interior region and overlying a surface region of each of the hexagonal shaped pyramid structures;
• wherein the upper surface of the gallium and nitrogen containing substrate comprises:
• an N-type gallium and nitrogen containing material having a silicon dopant overlying the upper surface, the N-type gallium and nitrogen containing material being configured as a buffer material;
• a super lattice (SL) material overlying the N-type gallium and nitrogen containing material, the SL material comprising a plurality of layers of an indium gallium nitrogen containing material and a gallium and nitrogen containing material;
• a lower barrier (LB) indium gallium nitrogen containing material overlying the SL material, the LB material having an indium concentration ranging from greater than zero to four percent;
• a quantum well region having a plurality of quantum wells overlying the LB material, each of the quantum wells having an indium gallium nitride material and a gallium nitride material;
• an upper barrier (UB 1) material overlying the quantum well region, the upper barrier (UB 1) material comprising a gallium and nitrogen containing material and/or an indium and gallium nitrogen containing material, the upper barrier (UB 1) material being in an undoped state;
• an upper barrier (UB 2) material overlying the upper barrier (UB 1) material, the upper barrier (UB 2) comprising a magnesium doped gallium nitrogen containing material;
• a P-type gallium and nitrogen containing material overlying the upper barrier (UB 2) gallium nitrogen containing material;
• and
• a P-type contact comprising a magnesium doped gallium and nitrogen material, the P-type contact being in electrical and physical contact with the P-type material.

A power converter device comprising:

• a laser device configured to emit electromagnetic energy as a laser beam;
• a fiber optical cable configured to receive the laser beam;
• and a photodiode device coupled to receive the laser beam and convert the laser beam into electrical energy, the photodiode device comprising:
• a gallium and nitrogen containing substrate member having a backside surface and an upper surface;
• wherein the backside surface of the gallium and nitrogen containing substrate comprises:
• a plurality of hexagonal shaped pyramid structures spatially disposed along the backside surface, each of the hexagonal shaped pyramid structures extending from a crystalline structure of the gallium and nitrogen containing substrate member;
• and
• an interior region disposed between a pair of the plurality of hexagonal shaped pyramid structures;
• and a plurality of nanodots spatially disposed overlying the interior region and overlying a surface region of each of the hexagonal shaped pyramid structures;
• wherein the upper surface of the gallium and nitrogen containing substrate comprises:
• an N-type gallium and nitrogen containing material having a silicon dopant overlying the upper surface, the N-type gallium and nitrogen containing material being configured as a buffer material;
• a super lattice (SL) material overlying the N-type gallium and nitrogen containing material, the SL material comprising an indium gallium nitrogen containing material and a gallium and nitrogen containing material, the SL material having fifteen to eighty layers of the indium gallium nitrogen containing material and the gallium and nitrogen containing material;
• a lower barrier (LB) indium gallium nitrogen containing material overlying the SL material, the LB material having an indium concentration ranging from zero to four percent;
• a quantum well region having a plurality of quantum wells overlying the LB material, each of the quantum wells having an indium gallium nitride material, and a gallium nitride material, the plurality of quantum well regions being an undoped state;
• an upper barrier (UB 1) material overlying the quantum well region, the upper barrier (UB1) material comprising a gallium and nitrogen containing material and/or an indium and gallium nitrogen containing material, the upper barrier material being in an undoped state;
• an upper barrier (UB 2) material overlying the upper barrier (UB1) material, the upper barrier (UB 2) material comprising a magnesium doped indium gallium nitrogen containing material;
• a P-type gallium and nitrogen containing material overlying the upper barrier (UB 2) material;
• and
• a P-type contact comprising gallium and nitrogen material having a magnesium dopant material, the P-type contact being in electrical and physical contact with the P-type material.