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US 2026/0164837 A1Published application
Gallium nitride containing high speed photodiode device and related method
AssigneeKYOCERA Corporation
InventorsChangmin Lee, Islam Sayed
Life of this patent
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Abstract
Techniques, including a method and device, for fabricating a high-speed photodiode device is provided. The device, in some configurations, includes a gallium and nitrogen containing epitaxial region, including a p-type and n-type regions configured on a thin substrate member. In an example, the device has both n-type and p-type contact regions configured in a planar arrangement.
Claims20
A donor substrate for a photodiode device comprising:
- a substrate member comprising a surface region;
- a nucleation material overlying the surface region;
- a first gallium and nitrogen containing material overlying the nucleation material;
- a sacrificial region overlying the first gallium and nitrogen containing material;
- an etching stop material overlying the sacrificial region;
- a second gallium and nitrogen containing material overlying the etch stop material;
- a plurality of defect migration layers overlying the second gallium and nitrogen containing material, the plurality of defect migration layers comprising alternating gallium nitride and indium gallium nitride regions;
- a lower barrier material overlying the plurality of defect migration layers;
- a plurality of absorber layers overlying the lower barrier material, the plurality of absorber layers comprising alternating indium gallium nitride regions;
- a first upper barrier material overlying the plurality of absorber layers;
- a second upper barrier material overlying the first upper barrier material;
- a contact material overlying the second upper barrier material;
- a first mesa structure configured from at least the contact material, the second upper barrier material, the first upper barrier material, the plurality of absorber layers, the lower barrier material, the plurality of defect migration layers, and the second gallium and nitrogen containing material;
- a second mesa structure configured from at least the sacrificial region;
- a blanket dielectric layer overlying the first mesa structure and configured to form a sidewall on an edge of at least the first mesa structure;
- a via structure configured in the blanket dielectric layer to expose a portion of the contact material;
- and
- an upper contact material overlying and electrically connected to the contact material through the via structure.
15 more elements
A photodiode device comprising:
- a donor substrate comprising:
- a gallium and nitrogen containing material;
- a plurality of defect migration layers coupled to the gallium and nitrogen containing material, the plurality of defect migration layers comprising alternating gallium nitride and indium gallium nitride regions;
- a lower barrier material coupled to the plurality of defect migration layers;
- a plurality of absorber layers coupled the lower barrier material, the plurality of a plurality of absorber layers comprising alternating indium gallium nitride regions;
- a first upper barrier material coupled to the plurality of absorber layers;
- a second upper barrier material coupled to the first upper barrier material;
- a contact material coupled to the second upper barrier material;
- a mesa structure configured from at least the contact material, the second upper barrier material, the first upper barrier material, the plurality of absorber layers, the lower barrier material, the plurality of defect migration layers, and the gallium and nitrogen containing material;
- a blanket dielectric layer covering the mesa structure and configured to form a sidewall on an edge of at least the mesa structure;
- a via structure configured in the blanket dielectric layer to expose a portion of the contact material;
- an upper contact material overlying and electrically connected to the contact material through the via structure and configured to form an p-type pad region and an n-type pad region;
- and
- a carrier substrate coupled to the donor substrate, the carrier substrate comprising:
- a first pattern for a p-type contact;
- and
- a second pattern for an n-type contact such that the p-type contact is electrically connected to the p-type pad region and the n-type contact is electrically connected to the n-type pad region.
14 more elements
A method of fabricating a high-speed photodiode device, the method comprising:
- providing a donor substate member comprising:
- a surface region;
- a nucleation material overlying the surface region of the donor substrate member;
- a first gallium and nitrogen containing material overlying the nucleation material;
- a sacrificial region overlying the first gallium and nitrogen containing material;
- an etching stop material overlying the sacrificial region;
- a second gallium and nitrogen containing material overlying the etch stop material;
- a plurality of defect migration layers overlying the second gallium and nitrogen containing material, the plurality of defect migration layers comprising alternating gallium nitride and indium gallium nitride regions;
- a lower barrier material overlying the plurality of defect migration layers;
- a plurality of absorber layers overlying the lower barrier material, the plurality of absorber layers comprising alternating indium gallium nitride regions;
- a first upper barrier material overlying the plurality of absorber layers;
- a second upper barrier material overlying the first upper barrier material;
- a p-type contact material overlying the second upper barrier material;
- a first mesa structure configured from at least the p-type contact material, the second upper barrier material, the first upper barrier material, the plurality of absorber layers, the lower barrier material, the plurality of defect migration layers, and the second gallium and nitrogen containing material;
- a blanket dielectric layer overlying the first mesa structure and configured to form a sidewall on an edge of at least the first mesa structure;
- a via structure configured in the blanket dielectric layer to expose a portion of the p-type contact material;
- an upper p-type contact material overlying and electrically connected to the p-type contact material through the via structure;
- and
- an upper n-type contact material overlying the second gallium and nitrogen containing material and configured such that the upper n-type contact material and the upper p-type contact material are characterized by a planar region to align a n-type surface of the n-type contact material with a p-type surface of the upper p-type contact material;
- flipping the donor substrate member;
- bonding the upper n-type contact material and the upper p-type contact material to an n-type pad region and a p-type pad region, respectively, of a carrier substrate member;
- and
- removing the donor substrate member by detaching the sacrificial region from the etch stop material.
20 more elements
Dependencies are inferred from the claim text.