Epitaxial structure of nonpolar AlGaN-based deep-ultraviolet (DUV) photoelectric detector and preparation method thereof

Abstract

An epitaxial structure of a nonpolar AlGaN-based deep-ultraviolet (DUV) photoelectric detector and a preparation method thereof are provided. The epitaxial structure of the nonpolar AlGaN-based DUV photoelectric detector includes a nonpolar AlN buffer layer, a nonpolar Al0.15Ga0.85N buffer layer, and a nonpolar Al0.7Ga0.3N epitaxial layer that are sequentially grown on a LaAlO3 substrate. The LaAlO3 substrate takes a (100) plane as an epitaxial plane, and AlN[11-20] as an epitaxial growth direction. With the LaAlO3 substrate, the epitaxial structure reduces dislocations and stresses between the substrate and the epitaxial buffer layer. By designing two AlGaN epitaxial buffer layers with different components, the epitaxial structure reduces a dislocation density and a surface roughness of the nonpolar AlGaN epitaxial layer, further accelerates photoresponse and detectivity of the detector, and enhances overall performance of the nonpolar AlGaN-based DUV photoelectric detector.

Dependencies are inferred from the claim text.