H10F 71/127
The active layers comprising only group iii-v materials
Official title: {The active layers comprising only Group III-V materials, e.g. GaAs or InP}
H10F71/127 (The active layers comprising only group iii-v materials) appears on 1,383 US grants and 1,596 published applications in this corpus.
Search patents in H10F- Granted patents
- 1,383
- Published applications
- 1,596
- Assignees
- 595
- Inventors
- 2,587
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 2 | 0 |
| 1979 | 5 | 0 |
| 1980 | 4 | 0 |
| 1981 | 4 | 0 |
| 1982 | 6 | 0 |
| 1983 | 7 | 0 |
| 1984 | 6 | 0 |
| 1985 | 9 | 0 |
| 1986 | 5 | 0 |
| 1987 | 5 | 0 |
| 1988 | 12 | 0 |
| 1989 | 11 | 0 |
| 1990 | 9 | 0 |
| 1991 | 12 | 0 |
| 1992 | 17 | 0 |
| 1993 | 14 | 0 |
| 1994 | 12 | 0 |
| 1995 | 12 | 0 |
| 1996 | 14 | 0 |
| 1997 | 9 | 0 |
| 1998 | 8 | 0 |
| 1999 | 7 | 0 |
| 2000 | 10 | 0 |
| 2001 | 8 | 6 |
| 2002 | 13 | 26 |
| 2003 | 19 | 25 |
| 2004 | 14 | 16 |
| 2005 | 7 | 18 |
| 2006 | 15 | 17 |
| 2007 | 8 | 24 |
| 2008 | 10 | 27 |
| 2009 | 16 | 45 |
| 2010 | 18 | 81 |
| 2011 | 23 | 83 |
| 2012 | 40 | 90 |
| 2013 | 50 | 81 |
| 2014 | 78 | 97 |
| 2015 | 93 | 127 |
| 2016 | 94 | 96 |
| 2017 | 89 | 110 |
| 2018 | 92 | 105 |
| 2019 | 91 | 86 |
| 2020 | 96 | 83 |
| 2021 | 78 | 88 |
| 2022 | 59 | 73 |
| 2023 | 51 | 56 |
| 2024 | 51 | 64 |
| 2025 | 42 | 40 |
| 2026 | 26 | 32 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Use of a low bandgap absorber region in a laser power converter29 Sep 2026US 12,751,093 B2The Boeing Company
- Multijunction metamorphic solar cells29 Sep 2026US 12,751,095 B2SolAero Technologies Corp.
- Solar blind solid state gallium containing photodiode device and related method29 Sep 2026US 12,751,096 B2Palomino Laboratories, Inc.
- Method for stripping a III-V semiconductor layer epitaxially grown on a semiconductor wafer22 Sep 2026US 12,745,480 B2AZUR SPACE Solar Power GmbH
- Infrared detector with photonic crystal over absorption layer and preparation method therefor15 Sep 2026US 12,740,183 B2Shanghai Institute of Technical Physics, CAS.
- Solar cell design for improved performance at low temperature1 Oct 2026US 2026/0304965 A1The Boeing Company
- Method and device for photodetector circuit with selectively transparent buffer24 Sep 2026US 2026/0293330 A1Aeluma, Inc.
- Packaging Method for Photoelectric Element24 Sep 2026US 2026/0293362 A1National Atomic Research Institute
- Epitaxial growth substrate, method of producing epitaxial growth substrate, and semiconductor element10 Sep 2026US 2026/0265953 A1Dowa Electronics Materials Co., Ltd.
- Ferroelectric iii-nitride alloy-based photodetectors10 Sep 2026US 2026/0271411 A1The Regents of the University of Michigan
Most cited
By later US patents
- Method of fabricating epitaxial structures827US 8,455,290 B2Masimo Semiconductor, Inc. · 2013
- Method of fabricating bifacial tandem solar cells756US 8,852,994 B2Masimo Semiconductor, Inc. · 2014
- Reduction of dislocations in a heteroepitaxial semiconductor structure513US 6,010,937 ASpire Corporation · 2000
- Bifacial tandem solar cells511US 9,368,671 B2Masimo Semiconductor, Inc. · 2016
- Method of producing sheets of crystalline material345US 4,727,047 AMassachusetts Institute of Technology · 1988