H10F 71/1278
Comprising nitrides
Official title: {comprising nitrides, e.g. GaN}
H10F71/1278 (Comprising nitrides) appears on 156 US grants and 206 published applications in this corpus.
Search patents in H10F- Granted patents
- 156
- Published applications
- 206
- Assignees
- 103
- Inventors
- 382
- Latest grant
- 25 Nov 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 1 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 1 | 2 |
| 2008 | 0 | 2 |
| 2009 | 0 | 0 |
| 2010 | 1 | 1 |
| 2011 | 0 | 3 |
| 2012 | 1 | 10 |
| 2013 | 2 | 12 |
| 2014 | 11 | 22 |
| 2015 | 16 | 21 |
| 2016 | 16 | 13 |
| 2017 | 19 | 20 |
| 2018 | 14 | 22 |
| 2019 | 17 | 18 |
| 2020 | 18 | 10 |
| 2021 | 13 | 17 |
| 2022 | 8 | 6 |
| 2023 | 5 | 4 |
| 2024 | 5 | 12 |
| 2025 | 8 | 7 |
| 2026 | 0 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Solar-blind AlGaN ultraviolet photodetector and preparation method thereof25 Nov 2025US 12,484,315 B2South China University of Technology
- Materials, structures, and methods for optical and electrical III-nitride semiconductor devices4 Nov 2025US 12,464,847 B1
- Dislocation free semiconductor nanostructures grown by pulse laser deposition with no seeding or catalyst23 Sep 2025US 12,426,406 B2King Abdullah University of Science and Technology
- Structure with photodiode, high electron mobility transistor, surface acoustic wave device and fabricating method of the same2 Sep 2025US 12,406,973 B2United Microelectronics Corp.
- Low resistance photoconductive semiconductor switch (PCSS)29 Jul 2025US 12,376,388 B2The Government of the United States of America, as represented by the Secretary of the Navy
- Inverted metamorphic multijunction solar cells having a permanent supporting substrate2 Jul 2026US 2026/0190504 A1SolAero Technologies Corp.
- Radiation-detecting structures and fabrication methods thereof25 Jun 2026US 2026/0182051 A1Rensselaer Polytechnic Institute
- YTTRIUM-Doped III-Nitride Semiconductor Devices19 Feb 2026US 2026/0052717 A1The Regents of the University of Michigan
- Structure with photodiode, high electron mobility transistor, surface acoustic wave device and fabricating method of the same27 Nov 2025US 2025/0364515 A1United Microelectronics Corp.
- Low resistance light controlled semiconductor switch (lcss)30 Oct 2025US 2025/0338640 A1The Government of the United States of America, as represented by the Secretary of the Navy
Most cited
By later US patents
- Gallium nitride material devices and methods of forming the same72US 7,233,028 B2Nitronex Corporation · 2007
- Nitride-based multi-junction solar cell modules and methods for making the same69US 7,825,328 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2010
- Diode for a printable composition69US 8,415,879 B2Nthdegree Technologies Worldwide Inc. · 2013
- Printable composition of a liquid or gel suspension of diodes47US 8,809,126 B2Nthdegree Technologies Worldwide Inc. · 2014
- Optical device having mesas19US 9,450,148 B22016