Structure with photodiode, high electron mobility transistor, surface acoustic wave device and fabricating method of the same

A structure with a photodiode, a high electron mobility transistor (HEMT) and a surface acoustic wave (SAW) device, comprising:

• a photodiode, comprising:
• a first III-V semiconductor layer;
• a first N-type III-V semiconductor layer disposed on and contacting the first III-V semiconductor layer;
• a multi-quantum well (MQW) layer disposed on and contacting the first N-type III-V semiconductor layer;
• a second III-V semiconductor layer disposed on and contacting the MQW layer;
• a P-type III-V semiconductor layer disposed on and contacting the second III-V semiconductor layer;
• a first electrode disposed on and contacting the P-type III-V semiconductor layer;
• and
• a second electrode disposed on and contacting the first N-type III-V semiconductor layer;
• an HEMT comprising:
• a channel layer;
• an active layer disposed on the channel layer;
• a P-type gate disposed on the active layer;
• a gate electrode disposed on and contacting the P-type gate;
• and
• two source/drain electrodes respectively disposed at two sides of the P-type gate, wherein the two source/drain electrodes are embedded within the active layer and the channel layer;
• wherein Schottky contact is between the first electrode and the P-type III-V semiconductor layer, and between the gate electrode and the P-type gate, Ohmic contact is between the second electrode and the first N-type III-V semiconductor layer, between one of the two source/drain electrodes and the active layer and between the other one of two source/drain electrodes and the active layer.