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US 7,233,028 B2Granted
Gallium nitride material devices and methods of forming the same
AssigneeNitronex Corporation
InventorsT. Warren Weeks, Kevin J. Linthicum
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Abstract
The invention provides gallium nitride material devices, structures and methods of forming the same. The devices include a gallium nitride material formed over a substrate, such as silicon. Exemplary devices include light emitting devices (e.g., LED's, lasers), light detecting devices (such as detectors and sensors), power rectifier diodes and FETs (e.g., HFETs), amongst others.
Claims47
A semiconductor device comprising:
- a substrate;
- a gallium nitride material region formed over the substrate;
- a first electrical contact formed over a portion of the gallium nitride material region;
- a second electrical contact formed over a portion of the gallium nitride material region;
- and
- at least one via extending from a first side of the semiconductor device and having electrically conductive material formed therein, the electrically conductive material being in direct contact with the first electrical contact.
3 more elements
Dependencies are inferred from the claim text.