Use of a low bandgap absorber region in a laser power converter

A method, comprising:

• fabricating a laser power converter (LPC) comprising a plurality of subcells on a substrate, the plurality of subcells including a top subcell and a bottom subcell, wherein:
• at least one subcell of the plurality of subcells has an emitter and a base with a low bandgap absorber region (LBAR) coupled between the emitter and the base;
• the emitter and the base include AlGaAs with an Al content higher than a mole fraction of 10%, with a first bandgap higher than 1.55 eV and corresponding to a wavelength longer than a wavelength of incident laser light, such that the emitter and the base are transparent to the incident laser light;
• the wavelength of the incident laser light is between 808 nm and 1500 nm;
• the LBAR comprises Ga (In) As with a second bandgap lower than the first bandgap, such that the LBAR absorbs the incident laser light and generates current in response to the incident laser light;
• and
• a current generated between the top subcell and the bottom subcell is controlled based on a thickness of the LBAR, such that the LBAR is configured to balance the current generated between the top subcell and the bottom subcell.

A method, comprising:

• converting incident laser light into current in a laser power converter (LPC) comprising a plurality of subcells on a substrate, the plurality of subcells including a top subcell and a bottom subcell, wherein:
• at least one subcell of the plurality of subcells has an emitter and a base with a low bandgap absorber region (LBAR) coupled between the emitter and the base;
• the emitter and the base include AlGaAs with an Al content higher than a mole fraction of 10%, with a first bandgap higher than 1.55 eV and corresponding to a wavelength longer than a wavelength of the incident laser light, such that the emitter and the base are transparent to the incident laser light;
• the wavelength of the incident laser light is between 808 nm and 1500 nm;
• the LBAR comprises Ga (In) As with a second bandgap lower than the first bandgap, such that the LBAR absorbs the incident laser light and generates current in response to the incident laser light;
• and
• a current generated between the top subcell and the bottom subcell is controlled based on a thickness of the LBAR, such that the LBAR is configured to balance the current generated between the top subcell and the bottom subcell.