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US 2026/0304965 A1Published application
Solar cell design for improved performance at low temperature
AssigneeThe Boeing Company
InventorsPhilip Chiu, Christopher M. Fetzer, Xingquan Liu
Life of this patent
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Abstract
A solar cell having a cell comprised of gallium arsenide (GaAs) or indium gallium arsenide (InGaAs) with a back surface field (BSF) comprised of aluminum gallium arsenide (AlGaAs) or indium aluminum gallium arsenide (InAlGaAs) p-type doped for enhanced operation of the solar cell at temperatures less than −50° C. In one example, the back surface field comprises AlxGa1-xAs or In0.01AlxGa1-xAs, wherein x is less than about 0.8, for example, 0.2. The back surface field may be p-type doped with zinc (Zn) or carbon (C).
Claims20
A device, comprising:
- a solar cell having a middle cell comprised of gallium arsenide (GaAs) or indium gallium arsenide (InGaAs) with a base;
- a back surface field (BSF), wherein the BSF is p-type doped for enhanced operation of the solar cell at temperatures less than about −50° C.;
- and
- a nucleation layer surrounded by and in direct contact with a substrate and a buffer, the buffer being surrounded by and in direct contact with the nucleation layer and a tunnel junction.
1 more element
A method, comprising:
- fabricating a solar cell having a middle cell comprised of gallium arsenide (GaAs) or indium gallium arsenide (InGaAs) with a base, a nucleation layer, and a back surface field (BSF), wherein:
- the BSF is p-type doped for enhanced operation of the solar cell at temperatures less than about −50° C., and
- the nucleation layer is surrounded by and in direct contact with a substrate and a buffer, the buffer being surrounded by and in direct contact with the nucleation layer and a tunnel junction.
A device, comprising:
- a solar cell having a middle cell with a base, a nucleation layer, and a back surface field (BSF) for enhanced operation of the solar cell at temperatures less than about −50° C.,
- wherein the base is comprised of gallium arsenide (GaAs) or indium gallium arsenide (InGaAs), and the BSF is comprised of In0.01AlxGa1-xAs, and x is less than about 0.8, and
- wherein the nucleation layer is surrounded by and in direct contact with a substrate and a buffer, the buffer being surrounded by and in direct contact with the nucleation layer and a tunnel junction.
Dependencies are inferred from the claim text.