H10F 71/1276
Comprising growth substrates not made of group iii-v materials
Official title: {comprising growth substrates not made of Group III-V materials}
H10F71/1276 (Comprising growth substrates not made of group iii-v materials) appears on 396 US grants and 508 published applications in this corpus.
Search patents in H10F- Granted patents
- 396
- Published applications
- 508
- Assignees
- 233
- Inventors
- 855
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 1 | 0 |
| 1990 | 3 | 0 |
| 1991 | 4 | 0 |
| 1992 | 5 | 0 |
| 1993 | 5 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 7 | 0 |
| 1997 | 3 | 0 |
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
| 2000 | 4 | 0 |
| 2001 | 4 | 4 |
| 2002 | 6 | 17 |
| 2003 | 12 | 16 |
| 2004 | 5 | 6 |
| 2005 | 6 | 9 |
| 2006 | 5 | 5 |
| 2007 | 2 | 5 |
| 2008 | 2 | 9 |
| 2009 | 6 | 21 |
| 2010 | 9 | 35 |
| 2011 | 8 | 40 |
| 2012 | 17 | 32 |
| 2013 | 19 | 33 |
| 2014 | 24 | 34 |
| 2015 | 31 | 46 |
| 2016 | 26 | 19 |
| 2017 | 18 | 28 |
| 2018 | 27 | 30 |
| 2019 | 22 | 20 |
| 2020 | 23 | 17 |
| 2021 | 19 | 23 |
| 2022 | 14 | 21 |
| 2023 | 16 | 13 |
| 2024 | 15 | 14 |
| 2025 | 16 | 7 |
| 2026 | 6 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Solar blind solid state gallium containing photodiode device and related method29 Sep 2026US 12,751,096 B2Palomino Laboratories, Inc.
- Integrated active silicon photonic devices and methods thereof25 Aug 2026US 12,720,903 B1Aeluma, Inc.
- Method and device for photodetector circuit with selectively transparent buffer9 Jun 2026US 12,652,865 B1Aeluma, Inc.
- Bonded semiconductor device and method for manufacturing bonded semiconductor device26 May 2026US 12,641,924 B2Shin-Etsu Handotai Co., Ltd.
- High efficiency tandem solar cells and a method for fabricating same10 Feb 2026US 12,550,457 B2
- Method and device for photodetector circuit with selectively transparent buffer24 Sep 2026US 2026/0293330 A1Aeluma, Inc.
- Photodetector, photoelectric sensor, methods of forming the same and determining concentration21 May 2026US 2026/0143829 A1Nanyang Technological University
- Semiconductor structure and manufacturing method thereof9 Apr 2026US 2026/0101604 A1Taiwan-Asia Semiconductor Corporation
- YTTRIUM-Doped III-Nitride Semiconductor Devices19 Feb 2026US 2026/0052717 A1The Regents of the University of Michigan
- Ultra-thin strain-relieving si1-xgex layers enabling iii-v epitaxy on si27 Nov 2025US 2025/0366262 A1McMaster University
Most cited
By later US patents
- Reduction of dislocations in a heteroepitaxial semiconductor structure513US 6,010,937 ASpire Corporation · 2000
- High efficiency multi-junction solar cell138US 5,405,453 AApplied Solar Energy Corporation · 1995
- High-efficiency solar cell and method for fabrication135US 5,944,913 ASandia Corporation · 1999
- Nitride based semiconductor device and manufacture thereof134US 5,602,418 AAsahi Kasei Kogyo Kabushiki Kaisha · 1997
- Solution growth of lattice mismatched and solubility mismatched heterostructures118US 4,876,210 AUniversity of Delaware · 1989