Semiconductor structure and manufacturing method thereof
AssigneeTaiwan-Asia Semiconductor Corporation
InventorsHou-Jun Wu, Chun-Sheng Shao
Life of this patent
Estimating the term…
Abstract
A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a bulk silicon substrate, an oxide layer, a patterned polycrystalline silicon layer and a patterned epitaxial layer. The oxide layer is disposed above the bulk silicon substrate, the patterned polycrystalline silicon layer is disposed above the oxide layer, and the patterned epitaxial layer is disposed above the patterned polycrystalline silicon layer. The patterned epitaxial layer has an optoelectronic component and a control circuit. The optoelectronic component and the control circuit are spatially isolated from each other due to the patterned polycrystalline silicon layer.
Claims12
A semiconductor structure, comprising:
- a bulk silicon substrate;
- an oxide layer, disposed above the bulk silicon substrate;
- a patterned polycrystalline silicon layer, disposed above the oxide layer;
- and
- a patterned epitaxial layer, disposed above the patterned polycrystalline silicon layer,
- wherein the patterned epitaxial layer has an optoelectronic component and a control circuit, the optoelectronic component and the control circuit are spatially isolated from each other corresponding to the patterned polycrystalline silicon layer.
A semiconductor structure, comprising:
- a bulk silicon substrate;
- a patterned oxide layer, disposed above the bulk silicon substrate to expose a portion of the bulk silicon substrate;
- a patterned polycrystalline silicon layer, disposed above the patterned oxide layer;
- a patterned epitaxial layer, disposed above the patterned polycrystalline silicon layer, wherein the patterned epitaxial layer has an optoelectronic component;
- and
- a control circuit, disposed above the exposed portion of the bulk silicon substrate,
- wherein the optoelectronic component and the control circuit are spatially isolated from each other corresponding to the patterned oxide layer.
A manufacturing method of a semiconductor structure, comprising:
- providing a bulk silicon substrate;
- providing an oxide layer, disposed above the bulk silicon substrate;
- providing a patterned polycrystalline silicon layer, disposed above the oxide layer;
- and
- providing a patterned epitaxial layer, disposed above the patterned polycrystalline silicon layer,
- wherein the patterned epitaxial layer has an optoelectronic component and a control circuit, the optoelectronic component and the control circuit are spatially isolated from each other corresponding to the patterned polycrystalline silicon layer.
A manufacturing method of a semiconductor structure, comprising:
- providing a bulk silicon substrate;
- providing a patterned oxide layer, disposed above the bulk silicon substrate to expose a portion of the bulk silicon substrate;
- providing a patterned polycrystalline silicon layer, disposed above the patterned oxide layer;
- providing a patterned epitaxial layer, disposed above the patterned polycrystalline silicon layer, wherein the patterned epitaxial layer has an optoelectronic component;
- and
- providing a control circuit, disposed above the exposed portion of the bulk silicon substrate,
- wherein the optoelectronic component and the control circuit are spatially isolated from each other corresponding to the patterned oxide layer.
Dependencies are inferred from the claim text.