Method for stripping a III-V semiconductor layer epitaxially grown on a semiconductor wafer

A method for stripping a III-V semiconductor layer epitaxially grown on a semiconductor wafer, the semiconductor wafer having a diameter of at least 100 mm, the semiconductor wafer being designed as a substrate and comprises a III-V material or a group IV material or is made up of a III-V material or a group IV material, the semiconductor wafer having an upper side and an underside, the method comprising:

• forming a buffer layer on the upper side;
• forming a sacrificial layer on the upper side of the buffer layer;
• arranging the semiconductor layer above the sacrificial layer for a formation of components, the semiconductor layer having a thickness of more than 0.5 μm, the buffer layer, sacrificial layer, and semiconductor layer each comprising a III-V material or are made up of a III-V material;
• forming a carrier layer above the semiconductor layer, the carrier layer and the semiconductor layer comprising different materials, and the carrier layer having a thickness of more than 10 μm, the sacrificial layer having a wet chemical etching rate which is higher by a factor of at least 10 compared to the semiconductor layer;
• forming the sacrificial layer and the buffer layer and the semiconductor layer and the carrier layer over a wide area or over a wide area in a central region of the semiconductor wafer, the central region having a radius of at least 40 mm;
• introducing the semiconductor wafer into a receiving device;
• reading out position data of points arranged on the upper side of the semiconductor wafer from a memory device, the points being arranged along a line;
• producing holes having a base, in that a laser approaches the predefined points based on the position data, the holes being produced through the carrier layer and the layers formed beneath the carrier layer at least a portion of the points, using the laser;
• controlling the laser such that the base of the particular hole is formed within the buffer layer;
• and
• introducing an etching solution into the holes in a wet chemical process step with the carrier layer arranged on top for the purpose of at least partially removing the sacrificial layer and stripping the semiconductor layer,
• wherein the process steps are performed in the listed sequence.