H10F 30/221
The potential barrier being a pn homojunction
Official title: the potential barrier being a PN homojunction
H10F30/221 (The potential barrier being a pn homojunction) appears on 1,237 US grants and 1,237 published applications in this corpus.
Search patents in H10F- Granted patents
- 1,237
- Published applications
- 1,237
- Assignees
- 544
- Inventors
- 2,442
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 3 | 0 |
| 1978 | 11 | 0 |
| 1979 | 9 | 0 |
| 1980 | 6 | 0 |
| 1981 | 3 | 0 |
| 1982 | 4 | 0 |
| 1983 | 4 | 0 |
| 1984 | 0 | 0 |
| 1985 | 4 | 0 |
| 1986 | 7 | 0 |
| 1987 | 5 | 0 |
| 1988 | 9 | 0 |
| 1989 | 9 | 0 |
| 1990 | 15 | 0 |
| 1991 | 8 | 0 |
| 1992 | 10 | 0 |
| 1993 | 10 | 0 |
| 1994 | 9 | 0 |
| 1995 | 13 | 0 |
| 1996 | 7 | 0 |
| 1997 | 9 | 0 |
| 1998 | 15 | 0 |
| 1999 | 16 | 0 |
| 2000 | 20 | 0 |
| 2001 | 21 | 13 |
| 2002 | 27 | 30 |
| 2003 | 27 | 40 |
| 2004 | 34 | 28 |
| 2005 | 21 | 48 |
| 2006 | 29 | 42 |
| 2007 | 26 | 24 |
| 2008 | 16 | 33 |
| 2009 | 26 | 45 |
| 2010 | 38 | 51 |
| 2011 | 31 | 55 |
| 2012 | 34 | 45 |
| 2013 | 43 | 60 |
| 2014 | 77 | 62 |
| 2015 | 57 | 51 |
| 2016 | 41 | 46 |
| 2017 | 44 | 55 |
| 2018 | 45 | 65 |
| 2019 | 77 | 79 |
| 2020 | 57 | 61 |
| 2021 | 53 | 64 |
| 2022 | 51 | 55 |
| 2023 | 54 | 51 |
| 2024 | 43 | 68 |
| 2025 | 35 | 34 |
| 2026 | 21 | 32 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Structure of ultraviolet light sensing-enhanced photodiode25 Aug 2026US 12,720,907 B2Taiwan-Asia Semiconductor Corporation
- Pie photodetector18 Aug 2026US 12,713,714 B2Cisco Technology, Inc.
- Low-stress dielectric layer, planarization method, and low-temperature processing for 3D-integrated electrical device14 Jul 2026US 12,684,896 B2Raytheon Company
- Systems and methods for hybrid pin PbSe mid-wavelength infrared (MWIR) photodetectors16 Jun 2026US 12,660,361 B2Illinois Tool Works Inc.
- Germanium-silicon light sensing apparatus II9 Jun 2026US 12,652,869 B2Artilux, Inc.
- Sensor manufacturing method and sensor8 Oct 2026US 2026/0314086 A1The Hong Kong University of Science and Technology
- Photodetection device and electronic apparatus8 Oct 2026US 2026/0314090 A1Sony Semiconductor Solutions Corporation
- Silicon detector enabled by tunnel oxide passivating contact1 Oct 2026US 2026/0304968 A1Georgia Tech Research Corporation
- Germanium-silicon light sensing apparatus ii24 Sep 2026US 2026/0293334 A1Artilux, Inc.
- Plasmonic field-enhanced photodetector and image sensor using light absorbing layer having split conduction band and valence band17 Sep 2026US 2026/0282596 A1TMRW Electronics, SARL
Most cited
By later US patents
- Wavelength selective photodetector536US 5,726,440 ASpire Corporation · 1998
- Diamond electronic device and process for producing the same282US 5,632,812 ACanon Kabushiki Kaisha · 1997
- Lens array for photodiode device with an aperture having a lens region and a non-lens region141US 5,324,930 AEastman Kodak Company · 1994
- High sensitivity ultraviolet radiation detector136US 5,093,576 ACree Research, Inc. · 1992
- Silicon carbide photodiode with improved short wavelength response and very low leakage current103US 5,394,005 AGeneral Electric Company · 1995