Silicon detector enabled by tunnel oxide passivating contact
AssigneeGeorgia Tech Research Corporation
InventorsYuguo Tao, Mackenzie Duce, Anna S. Erickson
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Abstract
Systems, devices, and methods for manufacturing radiation detection devices. The radiation detection device comprises a silicon layer having at least a first side and a second side. The device may further comprise a first tunnel oxide layer having at least a first side and a second side. The second side of the first tunnel oxide layer may be disposed proximate to the first side of the silicon layer. The device may also comprise a first doped layer disposed proximate to the first side of the first tunnel oxide layer.
Claims26
A radiation detection system configured for detecting radiation comprising:
- a silicon layer having at least a first side and a second side;
- a first tunnel oxide layer having at least a first side and a second side, wherein the second side of the first tunnel oxide layer is disposed proximate to the first side of the silicon layer;
- and
- a first doped layer disposed proximate to the first side of the first tunnel oxide layer.
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Dependencies are inferred from the claim text.