H10F 30/2218
The devices comprising active layers made of only group iv-vi materials
Official title: {the devices comprising active layers made of only Group IV-VI materials}
H10F30/2218 (The devices comprising active layers made of only group iv-vi materials) appears on 103 US grants and 104 published applications in this corpus.
Search patents in H10F- Granted patents
- 103
- Published applications
- 104
- Assignees
- 68
- Inventors
- 221
- Latest grant
- 16 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 3 |
| 2004 | 0 | 0 |
| 2005 | 1 | 1 |
| 2006 | 1 | 3 |
| 2007 | 1 | 2 |
| 2008 | 3 | 4 |
| 2009 | 4 | 1 |
| 2010 | 1 | 2 |
| 2011 | 2 | 0 |
| 2012 | 1 | 0 |
| 2013 | 1 | 6 |
| 2014 | 3 | 1 |
| 2015 | 3 | 5 |
| 2016 | 2 | 4 |
| 2017 | 3 | 6 |
| 2018 | 4 | 9 |
| 2019 | 10 | 12 |
| 2020 | 7 | 7 |
| 2021 | 11 | 14 |
| 2022 | 8 | 6 |
| 2023 | 12 | 9 |
| 2024 | 6 | 8 |
| 2025 | 4 | 1 |
| 2026 | 4 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Systems and methods for hybrid pin PbSe mid-wavelength infrared (MWIR) photodetectors16 Jun 2026US 12,660,361 B2Illinois Tool Works Inc.
- Light receiving element, distance measurement module, and electronic equipment including a reflection film21 Apr 2026US 12,610,644 B2Sony Semiconductor Solutions Corporation
- Light reception element and electronic apparatus3 Mar 2026US 12,568,702 B2Sony Semiconductor Solutions Corporation
- Detector having quantum dot pn junction photodiode13 Jan 2026US 12,523,748 B2Allegro MicroSystems, LLC
- Photodetector with rotated electric field23 Dec 2025US 12,507,489 B2Cisco Technology, Inc.
- Photodetectors and methods of formation27 Nov 2025US 2025/0366221 A1Taiwan Semiconductor Manufacturing Company.Ltd
- High-speed light sensing apparatus7 Nov 2024US 2024/0369690 A1Artilux, Inc.
- Dielectric sidewall structure for quality improvement in ge and sige devices31 Oct 2024US 2024/0363777 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Novel silicon carbide-based lateral pn junction extreme ultraviolet detector based on selective-area ion implantation, and preparation method thereof20 Jun 2024US 2024/0204126 A1Nanjing University
- Photodetector with rotated electric field13 Jun 2024US 2024/0194813 A1Cisco Technology, Inc.
Most cited
By later US patents
- CMOS image sensor with buried superlattice layer to reduce crosstalk57US 10,304,881 B1Atomera Incorporated · 2019
- High-speed light sensing apparatus III52US 10,418,407 B2Artilux, Inc. · 2019
- Method of generating a geometrical rule for germanium integration within CMOS35US 7,340,709 B1Luxtera, Inc. · 2008
- SiGe or germanium flip chip optical receiver29US 6,980,748 B2International Business Machines Corporation · 2005
- High-speed light sensing apparatus27US 10,254,389 B2Artilux, Inc. · 2019