Photodetector with rotated electric field

A method comprising:

• doping a substrate to form a first doped region and a second doped region in the substrate;
• positioning an absorber such that the absorber extends from the first doped region to the second doped region;
• and
• doping the absorber to form a first region and a second region in the absorber, wherein the absorber comprises a first end and a second end opposite the first end, wherein the first doped region contacts the first end, wherein the second doped region contacts the second end and the first region of the absorber rather than the second region of the absorber, wherein the second region of the absorber extends from the first end towards the second end and extends across a majority of a width of the absorber, wherein a portion of the first doped region and a portion of the second doped region are positioned between the absorber and the substrate, and wherein the portion of the second doped region extends across a majority of a width of the absorber.

A photodetector comprising:

• an absorber comprising a first region, a second region that is more heavily doped than the first region, a first end and a second end opposite the first end, wherein the second region of the absorber extends from the first end towards the second end and extends across a majority of a width of the absorber;
• an anode region contacting the first end and the second region of the absorber, wherein a portion of the anode region is positioned between the absorber and a substrate;
• and
• a cathode region contacting the second end and the first region of the absorber rather than the second region of the absorber, wherein a portion of the cathode region is positioned between the absorber and the substrate, and wherein the portion of the cathode region extends across a majority of a width of the absorber.