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US 12,523,748 B2Granted
Detector having quantum dot pn junction photodiode
AssigneeAllegro MicroSystems, LLC
InventorsSean Keuleyan, Andrew S. Huntington, Nanditha Dissanayake, Chao Yi, George Williams
Life of this patent
Estimating the term…
Abstract
Methods and apparatus for a sensor having a photodetector array having photodetectors comprising a colloidal quantum dot (CQD) structure formed on an integrated circuit. The sensor may comprise a LIDAR time of flight sensor.
Claims48
A LIDAR sensor, comprising:
- a photodetector array having one or more photodetectors comprising colloidal quantum dots (CQDs), wherein the photodetector array is responsive to light transmitted at a known time and received by the photodetector array after reflection from a target for determining a distance from the target to the sensor, or to light with an interference pattern in time and space produced by coherent mixing of light reflected from a target with light from an optical local oscillator for determining a distance from the target to the sensor based on phase or frequency relationships extracted from the interference pattern;
- and
- an integrated circuit, wherein the photodetector array is formed on the integrated circuit, wherein the photodetector comprises a photodiode including a depletion region between a weakly p-doped layer and a heavily doped n-type transparent conductive oxide.
A method, comprising:
- employing a LIDAR sensor including a photodetector array having one or more photodetectors comprising colloidal quantum dots (CQDs), wherein the photodetector array is responsive to light transmitted at a known time and received by the photodetector array after reflection from a target for determining a distance from the target to the sensor, or to light with an interference pattern in time and space produced by coherent mixing of light reflected from a target with light from an optical local oscillator for determining a distance from the target to the sensor based on phase or frequency relationships extracted from the interference pattern, wherein the photodetector array is formed on an integrated circuit,
- wherein the photodetector comprises a photodiode including a depletion region between a weakly p-doped layer and a heavily doped n-type transparent conductive oxide.
Dependencies are inferred from the claim text.