Method of generating a geometrical rule for germanium integration within CMOS

In a computer-assisted product development system comprising a processor and a storage coupled thereto, a software-implemented method for asserting design rules related to the manufacturability of optoelectronic devices comprising germanium, the method comprising the steps of:

• generating by the processor a data structure representing an optoelectronic device comprising germanium integrated with a CMOS device, thereby generating a set of geometrical parameters;
• comparing by the processor one or more geometrical parameters with a set of device design rules to generate a comparison result,
• adjusting the one or more geometrical parameters with respect to the comparison result, thereby improving the manufacturability of optoelectronic devices comprising germanium integrated with CMOS devices, wherein:
• the design rules comprise a design rule for establishing mask dimensions for restricting the minimum active enclosure distance to the range of 0.16 to 0.2 microns in an actually constructed device wherein the active enclosure distance comprises the distance between the edge of a germanium window and the outer edge of an active shape and wherein the germanium window comprises an opening in a germanium growth mask for enabling the selective deposition of germanium.

In a computer-assisted product development system comprising a processor and a storage coupled thereto, a software-implemented method for asserting design rules related to the manufacturability of optoelectronic devices comprising germanium, the method comprising the steps of:

• generating by the processor a data structure representing an optoelectronic device comprising germanium integrated with a CMOS device, thereby generating a set of geometrical parameters;
• comparing by the processor one or more geometrical parameters with a set of device design rules to generate a comparison result,
• adjusting the one or more geometrical parameters with respect to the comparison result, thereby improving the manufacturability of optoelectronic devices comprising germanium integrated with CMOS devices, wherein:
• the design rules comprise a process related design rule restricting the maximum thickness for a germanium layer to the range of 250 to 400 nanometers in an actually constructed device.

In a computer-assisted product development system comprising a processor and a storage coupled thereto, a software-implemented method for asserting design rules related to the manufacturability of optoelectronic devices comprising germanium, the method comprising the steps of:

• generating by the processor a data structure representing an optoelectronic device comprising germanium integrated with a CMOS device, thereby generating a set of geometrical parameters;
• comparing by the processor one or more geometrical parameters with a set of device design rules to generate a comparison result,
• adjusting the one or more geometrical parameters with respect to the comparison result, thereby improving the manufacturability of optoelectronic devices comprising germanium integrated with CMOS devices, wherein:
• the design rules comprise a design rule restricting the minimum capping layer window enclosure distance to the range of 400 to 700 nanometers in an actually constructed device wherein the capping layer enclosure distance comprises the distance between the outer edge of the capping layer shape and the outer edge of the germanium window wherein the germanium window comprises an opening in a germanium growth mask for enabling the selective deposition of germanium.

In a computer-assisted product development system comprising a processor and a storage coupled thereto, a software-implemented method for asserting design rules related to the manufacturability of optoelectronic devices comprising germanium, the method comprising the steps of:

• generating by the processor a data structure representing an optoelectronic device comprising germanium integrated with a CMOS device, thereby generating a set of geometrical parameters;
• comparing by the processor one or more geometrical parameters with a set of device design rules to generate a comparison result,
• adjusting the one or more geometrical parameters with respect to the comparison result, thereby improving the manufacturability of optoelectronic devices comprising germanium integrated with CMOS devices, wherein:
• the design rules comprise a design rule restricting the minimum doping region enclosure distance for germanium contacts to the range of 50 to 70 nanometers in an actually constructed device wherein the minimum doping region enclosure distance for germanium contacts comprises the distance between the edge of a doped germanium region and the edge of a contact to the doped germanium region.