Systems and methods for hybrid pin PbSe mid-wavelength infrared (MWIR) photodetectors
AssigneeIllinois Tool Works Inc.
InventorsRichard S. Kim, Jeung Hun Park, Russell Dahl
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Abstract
Methods and systems are provided for photodetectors employing a hybrid PIN or PN Lead Selenium (PbSe) junction. In some examples, the PbSe junction can include one or more semiconducting layers, including n-type layers, n+-type layers, p(i)-type layers, and/or p+-type layers, as a list of non-limiting examples. Photodetectors employing PbSe PIN or PN junctions are created. Also disclosed are methods for preparing photo-sensitive PbSe semiconducting layers for detection of electromagnetic energy (e.g., mid-wavelength infrared (MWIR)).
Claims19
A method of forming a photodetector with a lead selenide (PbSe) junction, comprising:
- preparing a substrate;
- forming-an ion-implantation layer in or above the substrate;
- depositing a first layer of heavily doped PbSe on the substrate and ion-implantation layer;
- depositing a second layer of lightly doped or undoped PbSe layer on the first layer;
- depositing a third layer of heavily doped PbSe on the second layer opposite the first layer, wherein the first layer, the second layer, and the third layer are included in the junction;
- forming a sidewall on one or more of the substrate, the ion-implantation layer, the first layer, the second layer, or the third layer;
- and
- forming one or more electrodes to provide a conductive pathway through the junction.
A method of forming a photodetector with a lead selenide (PbSe) junction, comprising:
- preparing a substrate;
- forming an ion-implantation layer in or above the substrate;
- depositing a first layer of doped PbSe on the substrate and ion-implantation layer;
- depositing a second layer of doped PbSe layer on the first layer, wherein the first layer and the second layer are included in the junction;
- controlling the carrier concentration of the second layer;
- forming a sidewall on one or more of the substrate, the ion-implantation layer, the first layer, or the second layer;
- and
- forming one or more electrodes to provide a conductive pathway through the junction.
Dependencies are inferred from the claim text.