Light receiving element, distance measurement module, and electronic equipment including a reflection film

A distance measurement module, comprising:

• a predetermined light emitting source;
• and
• a light receiving element including:
• an on-chip lens;
• a wiring layer;
• and
• a semiconductor layer which is disposed between the on-chip lens and the wiring layer, wherein the semiconductor layer includes:
• a photodiode;
• and
• a first floating diffusion region to store charge generated by the photodiode, wherein the wiring layer includes:
• a reflection film which is disposed such that at least a portion thereof overlaps the photodiode when seen in a plan view;
• a first transfer transistor that transfers charge generated by the photodiode to the first floating diffusion region;
• and
• a wiring capacitance to store charge generated by the photodiode, wherein the reflection film is formed of a material different from that of a metal wiring electrically connected to a gate of the first transfer transistor, and wherein the reflection film is formed of a material having a reflectance for infrared rays lower than that of the metal wiring, and
• a first switching transistor that couples the first floating diffusion region to the wiring capacitance, wherein, in a cross-sectional view, the reflection film is between the wiring capacitance and the semiconductor layer.

Electronic equipment, comprising:

• a distance measurement module including a predetermined light emitting source, and a light receiving element,
• wherein the light receiving element includes
• an on-chip lens,
• a wiring layer, and
• a semiconductor layer which is disposed between the on-chip lens and the wiring layer, wherein the semiconductor layer includes:
• a photodiode;
• and
• a first floating diffusion region to store charge generated by the photodiode;
• wherein the wiring layer includes:
• a reflection film which is disposed such that at least a portion thereof overlaps the photodiode when seen in a plan view;
• a first transfer transistor that transfers charge generated by the photodiode to the first floating diffusion region;
• and
• a wiring capacitance to store charge generated by the photodiode, wherein the reflection film is formed of a material different from that of a metal wiring electrically connected to a gate of the first transfer transistor, and wherein the reflection film is formed of a material having a reflectance for infrared rays lower than that of the metal wiring;
• and
• a first switching transistor that couples the first floating diffusion region to the wiring capacitance, wherein, in a cross-sectional view, the reflection film is between the wiring capacitance and the semiconductor layer.