Structure of ultraviolet light sensing-enhanced photodiode

An ultraviolet light sensing-enhanced photodiode, including:

• a silicon photodiode;
• an infrared conversion layer formed on a surface of the silicon photodiode for receiving an ultraviolet light;
• and
• an infrared reflection layer disposed on a surface of the infrared conversion layer for receiving the incident ultraviolet light,
• wherein the ultraviolet light irradiates the infrared conversion layer, the infrared conversion layer absorbs and converts the ultraviolet light to radiate an infrared light, and a first portion of the infrared light is propagated to the silicon photodiode and converted to a photoelectric current by the silicon photodiode, and a second portion of the infrared light is absorbed by the infrared conversion layer, and
• wherein when the ultraviolet light irradiates the ultraviolet light sensing-enhanced photodiode, the ultraviolet light passes through and is absorbed by the infrared conversion layer to be converted into the infrared light, the infrared reflection layer is used to reflect a third portion of the infrared light that is originally escaped from the infrared reflection layer so that the third portion of the infrared light is reflected into the silicon photodiode and is converted into the photoelectric current by the silicon photodiode.