H10F 30/2215
The devices comprising active layers made of only group iii-v materials
Official title: {the devices comprising active layers made of only Group III-V materials}
H10F30/2215 (The devices comprising active layers made of only group iii-v materials) appears on 262 US grants and 247 published applications in this corpus.
Search patents in H10F- Granted patents
- 262
- Published applications
- 247
- Assignees
- 184
- Inventors
- 551
- Latest grant
- 12 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 2 | 0 |
| 1979 | 2 | 0 |
| 1980 | 2 | 0 |
| 1981 | 2 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 3 | 0 |
| 1987 | 1 | 0 |
| 1988 | 2 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 2 | 0 |
| 1992 | 5 | 0 |
| 1993 | 3 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 2 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 4 | 0 |
| 2000 | 1 | 0 |
| 2001 | 6 | 2 |
| 2002 | 10 | 13 |
| 2003 | 4 | 13 |
| 2004 | 12 | 10 |
| 2005 | 11 | 13 |
| 2006 | 8 | 13 |
| 2007 | 7 | 6 |
| 2008 | 3 | 8 |
| 2009 | 3 | 4 |
| 2010 | 15 | 14 |
| 2011 | 2 | 14 |
| 2012 | 9 | 6 |
| 2013 | 14 | 6 |
| 2014 | 10 | 10 |
| 2015 | 8 | 9 |
| 2016 | 6 | 10 |
| 2017 | 11 | 13 |
| 2018 | 11 | 10 |
| 2019 | 13 | 8 |
| 2020 | 6 | 12 |
| 2021 | 10 | 14 |
| 2022 | 10 | 8 |
| 2023 | 9 | 10 |
| 2024 | 9 | 10 |
| 2025 | 8 | 4 |
| 2026 | 3 | 7 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Integration of a detection circuit based on optical resonators interconnected on a readout circuit of an imager12 May 2026US 12,628,456 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Photosensitive sensor and corresponding manufacturing method3 Feb 2026US 12,543,388 B2STMicroelectronics (Crolles 2) SAS
- Integration of a detection circuit based on optical resonators on a readout circuit of an imager3 Feb 2026US 12,543,397 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Semiconductor photo-detecting device30 Dec 2025US 12,514,027 B2Epistar Corporation
- Light-conversion layer and photovoltaic system11 Nov 2025US 12,471,407 B2Swiss Solar Space SA
- Horizontal photodiode and manufacturing method thereof10 Sep 2026US 2026/0271425 A1Taiwan-Asia Semiconductor Corporation
- Short-wave dual-band infrared detector based on indium phosphide substrate and fabrication method thereof9 Jul 2026US 2026/0198105 A1Institute of Semiconductors, Chinese Academy Science
- Ultra-Wide-Band-Gap Semiconductor Optical Switches and Photodetectors28 May 2026US 2026/0150430 A1
- Semiconductor photo-detecting device16 Apr 2026US 2026/0107604 A1Epistar Corporation
- Gan-based radiation detector9 Apr 2026US 2026/0101594 A1Btoz Inc.
Most cited
By later US patents
- III-nitride superlattice structures87US 5,831,277 ANorthwestern University · 1998
- Light emitting diode for use as an efficient emitter or detector of light at a common wavelength and method for forming the same75US 5,448,082 AOpto Diode Corporation · 1995
- Method of manufacturing an heteroepitaxial semiconductor structure69US 5,272,105 AGTE Laboratories Incorporated · 1993
- Opto-electronic integrated circuit68US 6,458,614 B1Murata Manufacturing Co., Ltd. · 2002
- High performance ultraviolet imager for operation at room temperature65US 6,483,116 B1Innovative Technology Licensing, LLC · 2002