III-nitride superlattice structures
AssigneeNorthwestern University
InventorManijeh Razeghi
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Abstract
The subject invention involves the p-type doping of Al.sub.x Ga.sub.1-x N thin films with a III-nitride composition and specifically a {Al.sub.x Ga.sub.1-x N/GaN} short-period superlattice structure of less than 5000 .ANG. thickness in total in which both the barriers and the wells are p-type doped with Mg.
Claims20
A photoemitter device, comprising a substrate, an upper and lower contact layer, an upper and lower confinement layer, an undoped active layer between said upper and lower confinement layer and a cap layer;
- said upper confinement layer comprising a superlattice structure having from about 5 to about 500 alternating layers of Al.sub.x Ga.sub.1-x N and GaN (0.ltoreq.X.ltoreq.1) with a total thickness of less than 5000 .ANG., and said lower confinement layer consisting essentially of one GaN layer and one Ga.sub.x Al.sub.1-x N layer.
A photoemitter device, comprising a substrate, an upper and lower contact layer, an upper and lower confinement layer, an undoped active layer between said upper and lower confinement layer and a cap layer;
- said upper confinement layer comprising a superlattice structure having from about 5 to about 500 alternating layers of Al.sub.x Ga.sub.1-x N and GaN (0.ltoreq.X.ltoreq.1) with a total thickness of less than 5000 .ANG., and said layers of GaN in said superlattice structure each being of substantially equal thickness.
Dependencies are inferred from the claim text.