Opto-electronic integrated circuit
AssigneeMurata Manufacturing Co., Ltd.
InventorsYasushi Nanishi, Michio Kadota
Life of this patent
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Abstract
An optical electronic integrated circuit comprises: a silicon substrate; an electronic circuit formed in the silicon substrate and processing an electric signal; a ZnO film formed on at least portion of the silicon substrate; and an optical circuit electrically connected to the electronic circuit. The optical circuit includes at least one GaN-based semiconductor compound layer which is provided on the ZnO film, and the GaN-based compound semiconductor layer either receives or emits an optical signal.
Claims19
A method of forming an optical electronic integrated circuit, comprising the steps of:
- providing a silicon substrate including an electronic circuit for processing an electric signal;
- forming a ZnO layer on at least a portion of the silicon substrate;
- and
- forming an optical circuit electrically connected to the electronic circuit and comprising at least one GaN-based semiconductor compound layer on the ZnO layer, wherein the GaN-based semiconductor compound layer either receives or emits an optical signal;
- and
- wherein the GaN-based semiconductor compound layer is formed at a temperature of 800° C. or lower;
- and
- further comprising the step of forming an additional layer of ZnO optically connected to the optical circuit and dimensioned so as to function as an optical waveguide.
A method of forming an optical electronic integrated circuit, comprising the steps of:
- providing a silicon substrate including an electronic circuit for processing an electric signal;
- forming a ZnO layer on at least a portion of the silicon substrate;
- and
- forming an optical circuit electrically connected to the electronic circuit and comprising at least one GaN-based semiconductor compound layer on the ZnO layer, wherein the GaN-based semiconductor compound layer either receives or emits an optical signal;
- and
- further comprising the step of forming an additional layer of ZnO optically connected to the optical circuit and dimensioned so as to function as an optical waveguide.
A method of forming an optical electronic integrated circuit, comprising the steps of:
- providing a silicon substrate including an electronic circuit for processing an electric signal;
- forming a ZnO layer on at least a portion of the silicon substrate;
- and
- forming an optical circuit electrically connected to the electronic circuit and comprising at least one GaN-based semiconductor compound layer on the ZnO layer, wherein the GaN-based semiconductor compound layer either receives or emits an optical signal;
- and
- wherein the GaN-based semiconductor compound layer is formed by the ECR-MBE method;
- and
- further comprising the step of forming an additional layer of ZnO optically connected to the optical circuit and dimensioned so as to function as an optical waveguide.
Dependencies are inferred from the claim text.