Integration of a detection circuit based on optical resonators interconnected on a readout circuit of an imager

A process for manufacturing an optoelectronic device (OPT), the process comprising the steps of:

• assembling a first planar structure (S1) comprising a first substrate (Sub1), an assembly of at least one photodetecting layer (CPD) and a first reflective metal layer (M1), on the one hand;
• and a readout integrated circuit (ROIC) deposited on a second substrate (Sub2) and comprising at least one buried readout electrode (EL) and a metal or dielectric outer layer (M3), on the other hand;
• the assembly comprising at least the first metal layer (M1) and the outer layer (M3, D2) of the readout integrated circuit (ROIC) forming a planar assembly structure (SPA), the planar assembly structure (SPA) being either continuous (SPAC) or structured (SPAS) and comprising individualized elementary assembly structures (SPAI) that are electrically isolated from one another;
• when the planar assembly structure (SPAC) is continuous, the buried readout electrode (EL) is electrically isolated from the continuous planar assembly structure (SPAC);
• when the planar assembly structure (SPAS) is structured, the buried readout electrode (EL) is electrically connected to an elementary assembly structure:
• detaching the first substrate (Sub1);
• producing at least one pixel (Pxl) associated with a buried electrode (EL), comprising the sub-steps of:
• producing a plurality of optical resonators (ROi) by:
• selectively etching each of the layers of said assembly of at least one photodetecting layer (CPD) to produce a plurality of photodetecting structures (SPD);
• depositing a second metal layer (M2) on each photodetecting structure (SPD);
• when the planar assembly structure (SPAS) is structured, the photodetecting structure (SPD) is located facing an individualized elementary assembly structure (SPAI);
• producing a support made of dielectric material between the resonators and connecting said optical resonators (ROi) to one another by way of a connection microstructure (MC) arranged on said support;
• producing a metal via (V1) passing through the support so as to connect the second metal layers (M2) of the resonators to the associated buried electrode (EL) via the connection microstructure (MC).