Photosensitive sensor and corresponding manufacturing method
AssigneeSTMicroelectronics (Crolles 2) SAS
InventorFrancois Roy
Life of this patent
Estimating the term…
Abstract
A photosensitive sensor includes a pixel formed by a photosensitive region in a first semiconductor material, a read region in a second semiconductor material, and a transfer gate facing the parts of the first semiconductor material and the second semiconductor material located between the photosensitive region and the read region. The first semiconductor material and the second semiconductor material have different band gaps and are in contact with one another to form a heterojunction facing the transfer gate.
Claims25
A photosensitive sensor, comprising:
- at least one pixel, where each pixel includes:
- a photosensitive region in a first semiconductor material;
- a read region in a second semiconductor material;
- and
- a transfer gate facing parts of the first semiconductor material and the second semiconductor material located between the photosensitive region and the read region;
- wherein the first semiconductor material has a first band gap and the second semiconductor material has a second band gap different from the first band gap;
- and
- wherein the first semiconductor material is in contact with the second semiconductor material to form a heterojunction located vertically underneath a conductive region of the transfer gate.
A photosensitive sensor, comprising:
- at least one pixel, where each pixel includes:
- a photosensitive region in a first semiconductor material;
- a read region in a second semiconductor material;
- and
- a transfer gate facing parts of the first semiconductor material and the second semiconductor material located between the photosensitive region and the read region;
- wherein the first semiconductor material has a first band gap and the second semiconductor material has a second band gap different from the first band gap;
- and
- wherein the first semiconductor material is in contact with the second semiconductor material to form a heterojunction facing the transfer gate;
- wherein the first semiconductor material and the second semiconductor material are doped with a same conductivity type in the parts of the first semiconductor material and the second semiconductor material located between the photosensitive region and the read region.
A pixel of a photosensitive sensor, comprising:
- a first semiconductor material;
- a second semiconductor material;
- wherein the first semiconductor material and second semiconductor material have different band gaps;
- wherein the first semiconductor material and second semiconductor material are arranged to form a heterojunction;
- wherein a part of the first semiconductor material and a part of the second semiconductor material are located on either side of the heterojunction;
- a transfer gate including a conductive region vertically underneath of which the heterojunction is located;
- a photosensitive region in the first semiconductor material;
- and
- a read region in the second semiconductor material.
Dependencies are inferred from the claim text.