Wavelength selective photodetector
AssigneeSpire Corporation
InventorsNader M. Kalkhoran, Fereydoon Namavar
Life of this patent
Estimating the term…
Abstract
A wavelength selective photodetector including: a substrate having a buried insulator layer for electrically isolating a lower section of the substrate located below the insulator layer from an upper section of the substrate located above the insulator layer; and a photon detector formed on the upper section of the substrate for detecting photons in a selected wavelength range, wherein the upper section has a selected thickness and the thickness determines at least in part the selected wavelength range of the detected photons.
Claims47
A wavelength selective photodetector comprising:
- a substrate having a buried insulator layer for electrically isolating a lower section of said substrate located below said insulator layer from an upper section of said substrate located above said insulator layer;
- and
- photon detection means formed on said upper section of said substrate for detecting photons;
- wherein said upper section has a selected thickness and said selected thickness at least in part determines a wavelength range of said photons detected by said photon detection means.
A wavelength selective photodetector comprising:
- a Si-based substrate having a buried silicon oxide insulator layer for electrically isolating a lower section of said substrate located below said insulator layer from an upper section of said substrate located above said insulator layer, said upper section having a thickness of between about 500 .ANG. and about 1 micron, and comprising SiC;
- a photodiode formed on said upper section for detecting photons within a selected wavelength range and generating an electrical signal indicative of said detection;
- ohmic contacts for electrical connection to said photodiode;
- and
- an antireflective coating formed on said photodiode for minimizing reflectance losses in said selected wavelength range.
A wavelength selective photodetector comprising:
- a Si-based substrate having a buried silicon oxide insulator layer for electrically isolating a lower section of said substrate located below said insulator layer from an upper section of said substrate located above said insulator layer, said upper section having a first layer and a second layer, said first layer being formed from Si and being located adjacent to said buried insulator layer and said second layer being formed from SiC and being formed on said first layer;
- a photodiode formed on said upper section for detecting photons within a selected wavelength range and generating an electrical signal indicative of said detection;
- ohmic contacts for electrical connection to said photodiode;
- and
- an antireflective coating formed on said photodiode for minimizing reflectance losses in said selected wavelength range.
Dependencies are inferred from the claim text.