Sensor manufacturing method and sensor

Abstract

A sensor manufacturing method and a sensor. The manufacturing method includes forming a 2H-MoTe2 film by telluriding a metal molybdenum film on a first substrate, and preparing a 1T′-MoTe2 film on one side of the 2H-MoTe2 film away from the first substrate to form a 1T′-MoTe2/2H-MoTe2 homojunction film; etching the 1T′-MoTe2/2H-MoTe2 homojunction film to form a patterned structure which comprises a channel layer of a sensor, and preparing a bottom electrode and a first electrode; separating the patterned structure from the first substrate; connecting the bottom electrode with a bottom side of the patterned structure; and connecting the first electrode with a top side of the patterned structure to form the sensor. The method can form a sensor with vertical structure, so that the illumination area is expanded while the channel length is shortened, and the photoresponse is improved.

Dependencies are inferred from the claim text.