H10F 30/2212
The devices comprising active layers made of only group ii-vi materials
Official title: {the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes}
H10F30/2212 (The devices comprising active layers made of only group ii-vi materials) appears on 151 US grants and 94 published applications in this corpus.
Search patents in H10F- Granted patents
- 151
- Published applications
- 94
- Assignees
- 76
- Inventors
- 261
- Latest grant
- 14 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 0 | 0 |
| 1978 | 5 | 0 |
| 1979 | 2 | 0 |
| 1980 | 2 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 2 | 0 |
| 1989 | 4 | 0 |
| 1990 | 5 | 0 |
| 1991 | 6 | 0 |
| 1992 | 3 | 0 |
| 1993 | 5 | 0 |
| 1994 | 2 | 0 |
| 1995 | 7 | 0 |
| 1996 | 2 | 0 |
| 1997 | 5 | 0 |
| 1998 | 3 | 0 |
| 1999 | 3 | 0 |
| 2000 | 5 | 0 |
| 2001 | 1 | 1 |
| 2002 | 1 | 1 |
| 2003 | 1 | 5 |
| 2004 | 4 | 1 |
| 2005 | 1 | 4 |
| 2006 | 4 | 3 |
| 2007 | 2 | 3 |
| 2008 | 1 | 4 |
| 2009 | 3 | 3 |
| 2010 | 4 | 9 |
| 2011 | 6 | 7 |
| 2012 | 3 | 1 |
| 2013 | 1 | 1 |
| 2014 | 5 | 5 |
| 2015 | 5 | 5 |
| 2016 | 5 | 6 |
| 2017 | 4 | 7 |
| 2018 | 4 | 3 |
| 2019 | 5 | 1 |
| 2020 | 7 | 4 |
| 2021 | 0 | 4 |
| 2022 | 3 | 4 |
| 2023 | 4 | 6 |
| 2024 | 4 | 4 |
| 2025 | 3 | 1 |
| 2026 | 1 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Low-stress dielectric layer, planarization method, and low-temperature processing for 3D-integrated electrical device14 Jul 2026US 12,684,896 B2Raytheon Company
- Method for fabricating a photodiode structure and photodiode structure30 Dec 2025US 12,514,022 B2Lynred
- Process for manufacturing a low-noise photodetector device in a CdHgTe substrate9 Dec 2025US 12,495,638 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Double photodiode electromagnetic radiation sensor device2 Sep 2025US 12,408,447 B2Politecnico Di Milano
- Systems and methods for thermal radiation detection15 Oct 2024US 12,117,345 B2The Procter & Gamble Company
- Pixel implant geometries for high-performance photodetectors19 Feb 2026US 2026/0052784 A1Raytheon Company
- Infrared photodetector with enhanced electron extraction30 Jan 2025US 2025/0040289 A1Centre National De La Recherche Scientifique
- Hgznte detector on silicon substrate23 May 2024US 2024/0170600 A1Raytheon Company
- Systems and methods for thermal radiation detection9 May 2024US 2024/0151588 A1The Procter & Gamble Company
- Electronic chip with ubm-type metallization4 Apr 2024US 2024/0113054 A1Commissariat A L' Energie Atomique Et Aux Energies Alternatives
Most cited
By later US patents
- Photodiode and photodiode array on a II-VI material and processes for the production thereof85US 4,972,244 ACommissariat A L' Energie Atomique · 1990
- Control of optical crosstalk between adjacent photodetecting regions44US 5,049,962 ASanta Barbara Research Center · 1991
- Graded gap inversion layer photodiode array43US 4,639,756 ASanta Barbara Research Center · 1987
- Simultaneous two color IR detector having common middle layer metallic contact40US 5,581,084 ASanta Barbara Research Center · 1996
- Electrolytic preparation of tin, other metals, alloys and compounds37US 5,215,631 ACel Systems Corporation · 1993