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US 2024/0170600 A1Published application
HgZnTe DETECTOR ON SILICON SUBSTRATE
AssigneeRaytheon Company
InventorJeffrey M. Peterson
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Abstract
A HgZnTe detector on a silicon substrate provides significant advantages over conventionally used HgCdTe detectors on silicon substrates, as HgZnTe is a harder material than HgCdTe, and has less lattice mismatch with silicon than HgCdTe. HgZnTe also has a higher dislocation energy than HgCdTe, as well as a higher thermal stability than HgCdTe, making it more resistant to dislocation.
Claims20
A detector assembly, comprising:
- a silicon substrate;
- a HgZnTe-based buffer layer grown on the silicon substrate;
- and
- a HgZnTe detector grown on the HgZnTe-based buffer layer.
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A method of forming a detector assembly, the method comprising the steps of:
- providing a silicon substrate;
- growing a HgZnTe-based buffer layer on the silicon substrate;
- and
- growing a HgZnTe detector on the HgZnTe-based buffer layer.
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Dependencies are inferred from the claim text.