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AssigneesCentre National De La Recherche Scientifique, Sorbonne Universite
InventorsEmmanuel LHUILLIER, Eva IZQUIERDO, Prachi RASTOGI, Charlie GRÉBOVAL
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The invention relates to an infrared photodetector (1), comprising an electron transport layer (4) and an infrared photon absorption layer (5) for generating an electrical signal, characterized in that the electron transport layer (4) comprises nanocrystals of a compound selected from SnO2, ZnO, CdS, CdSe, aluminium-doped zinc oxide, Cr2O3, CuO, CuO2, Cu2O3, ZrO2, and mixture thereof and heterostructure thereof and alloy thereof, and in that the infrared photon absorption layer (5) comprises nanocrystals of a compound selected from HgS, HgSe, HgTe, PbS, PbSe, PbTe, Ag2S, Ag2Se, Ag2Te, InAs, InGaAs, and InSb, and mixture thereof, and heterostructure thereof and alloy thereof.
Infrared photodetector, comprising an electron transport layer and an infrared photon absorption layer for generating an electrical signal, characterized in that the electron transport layer comprises nanocrystals of a compound selected from SnO2, ZnO, CdS, CdSe, aluminium-doped zinc oxide, Cr2O3, CuO, CuO2, Cu2O3, ZrO2, and mixture thereof and heterostructure thereof and alloy thereof, and in that the infrared photon absorption layer comprises nanocrystals of a compound selected from HgS, HgSe, HgTe, PbS, PbSe, PbTe, Ag2S, Ag2Se, Ag2Te, InAs, InGaAs and InSb and mixture thereof, and heterostructure thereof and alloy thereof.
Dependencies are inferred from the claim text.