Photodetection device and electronic apparatus
AssigneeSony Semiconductor Solutions Corporation
InventorKEN TOMITA
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AssigneeSony Semiconductor Solutions Corporation
InventorKEN TOMITA
Estimating the term…
Transconductance (gm) of a transfer transistor is increased. A photodetection device includes a semiconductor layer having a first surface and a second surface located opposite to each other in a thickness direction, a photoelectric conversion region provided in the semiconductor layer, the photoelectric conversion region being partitioned by an isolation region extending in the thickness direction of the semiconductor layer, and a transfer transistor including a gate electrode provided on a first surface side of the semiconductor layer in the photoelectric conversion region, the transfer transistor transferring signal charge obtained as a result of photoelectric conversion in the photoelectric conversion unit to a charge holding unit. The photoelectric conversion region includes a main body provided with the photoelectric conversion unit and the charge holding unit, and a protrusion protruding from the main body toward the isolation region in plan view, and the gate electrode of the transfer transistor is provided over the main body and the protrusion of the photoelectric conversion region.
A photodetection device comprising:
An electronic apparatus comprising:
Dependencies are inferred from the claim text.