H10D 99/00
Subject matter not provided for in other groups of this subclass
H10D99/00 (Subject matter not provided for in other groups of this subclass) appears on 4,710 US grants and 5,600 published applications in this corpus.
Search patents in H10D- Granted patents
- 4,710
- Published applications
- 5,600
- Assignees
- 698
- Inventors
- 5,466
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 155 | 0 |
| 1977 | 79 | 0 |
| 1978 | 21 | 0 |
| 1979 | 5 | 0 |
| 1980 | 3 | 0 |
| 1981 | 5 | 0 |
| 1982 | 5 | 0 |
| 1983 | 6 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 3 | 0 |
| 1988 | 3 | 0 |
| 1989 | 2 | 0 |
| 1990 | 5 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 3 | 0 |
| 1994 | 3 | 0 |
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 2 | 0 |
| 1999 | 2 | 0 |
| 2000 | 3 | 0 |
| 2001 | 4 | 0 |
| 2002 | 0 | 4 |
| 2003 | 4 | 4 |
| 2004 | 4 | 4 |
| 2005 | 1 | 8 |
| 2006 | 10 | 25 |
| 2007 | 6 | 11 |
| 2008 | 8 | 22 |
| 2009 | 13 | 23 |
| 2010 | 16 | 72 |
| 2011 | 34 | 171 |
| 2012 | 55 | 168 |
| 2013 | 120 | 247 |
| 2014 | 247 | 354 |
| 2015 | 334 | 536 |
| 2016 | 436 | 547 |
| 2017 | 482 | 491 |
| 2018 | 396 | 396 |
| 2019 | 417 | 353 |
| 2020 | 308 | 404 |
| 2021 | 277 | 393 |
| 2022 | 280 | 351 |
| 2023 | 234 | 342 |
| 2024 | 297 | 341 |
| 2025 | 268 | 235 |
| 2026 | 147 | 98 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device6 Oct 2026US 12,757,446 B2Idemitsu Kosan Co., Ltd.
- Semiconductor device including two-dimensional material and method of fabricating the same6 Oct 2026US 12,757,463 B2Samsung Electronics Co., Ltd.
- Semiconductor device and method of manufacturing the same6 Oct 2026US 12,757,472 B2Samsung Electronics Co., Ltd.
- Semiconductor element and production method for same29 Sep 2026US 12,751,048 B2National Institute of Information and Communications Technology
- Metal chalcogenide transistors with defected channel transition layer22 Sep 2026US 12,745,426 B2Intel Corporation
- Raised source/drain oxide semiconducting thin film transistor and methods of making the same8 Oct 2026US 2026/0313959 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Electronic circuit comprising transistor and resistor8 Oct 2026US 2026/0314039 A1Pragmatic Semiconductor Limited
- Source/drain contacts connecting 2-d material layer and method for forming the same8 Oct 2026US 2026/0314276 A1National Yang Ming.Chiao Tung University
- 3D Stackable Memory and Methods of Manufacture1 Oct 2026US 2026/0304789 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Transistor device with multi-layer channel structure24 Sep 2026US 2026/0293215 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Semiconductor device and manufacturing method thereof4,349US 7,674,650 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film4,076US 7,061,014 B2Japan Science and Technology Agency · 2006
- Semiconductor device and manufacturing method thereof4,064US 7,732,819 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Thin film transistor and matrix display device3,999US 6,563,174 B2Sharp Kabushiki Kaisha · 2003
- Field-effect transistor and method for manufacturing the same3,966US 7,411,209 B2Canon Kabushiki Kaisha · 2008