H10D 87/00
Integrated devices comprising both bulk components and either soi or sos components
Official title: Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
H10D87/00 (Integrated devices comprising both bulk components and either soi or sos components) appears on 1,601 US grants and 1,951 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,601
- Published applications
- 1,951
- Assignees
- 207
- Inventors
- 2,067
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
| 2000 | 3 | 0 |
| 2001 | 3 | 1 |
| 2002 | 6 | 11 |
| 2003 | 5 | 44 |
| 2004 | 3 | 10 |
| 2005 | 7 | 10 |
| 2006 | 12 | 37 |
| 2007 | 13 | 43 |
| 2008 | 30 | 47 |
| 2009 | 21 | 34 |
| 2010 | 38 | 23 |
| 2011 | 32 | 64 |
| 2012 | 27 | 73 |
| 2013 | 70 | 72 |
| 2014 | 78 | 79 |
| 2015 | 83 | 113 |
| 2016 | 109 | 146 |
| 2017 | 146 | 139 |
| 2018 | 116 | 106 |
| 2019 | 119 | 112 |
| 2020 | 101 | 135 |
| 2021 | 91 | 108 |
| 2022 | 94 | 143 |
| 2023 | 82 | 152 |
| 2024 | 134 | 112 |
| 2025 | 104 | 83 |
| 2026 | 63 | 54 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor fabrication process22 Sep 2026US 12,745,455 B2X-FAB France SAS
- Back-end-of-line CMOS inverter with vertical channels and methods of forming the same15 Sep 2026US 12,740,154 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Chip including silicon device and III-V semiconductor device on III-V semiconductor layer8 Sep 2026US 12,733,262 B2GLOBALFOUNDRIES U. S. Inc.
- Microelectronic structure comprising logic device and passive device with thinner Si layer1 Sep 2026US 12,727,252 B2International Business Machines Corporation
- Memory devices having vertical transistors and methods for forming the same25 Aug 2026US 12,720,725 B2Yangtze Memory Technologies Co., Ltd.
- Semiconductor device and manufacturing method of the same8 Oct 2026US 2026/0313974 A1Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor structure and method for forming the same24 Sep 2026US 2026/0293316 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Stacked multi-gate device with low contact via resistance and methods for forming the same17 Sep 2026US 2026/0282552 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Trapping layer for a radio frequency die and methods of formation3 Sep 2026US 2026/0262295 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory devices having vertical transistors and methods for forming the same27 Aug 2026US 2026/0255573 A1Yangtze Memory Technologies Co., Ltd.
Most cited
By later US patents
- Integrated circuit and method for its manufacture597US 6,972,478 B1Advanced Micro Devices, Inc. · 2005
- Semiconductor method and device with mixed orientation substrate566US 7,298,009 B2Infineon Technologies AG · 2007
- High-performance CMOS SOI devices on hybrid crystal-oriented substrates357US 6,995,456 B2International Business Machines Corporation · 2006
- Active matrix using hybrid integrated circuit and bipolar transistor272US 8,906,755 B1International Business Machines Corporation · 2014
- FET channel having a strained lattice structure along multiple surfaces269US 6,921,982 B2International Business Machines Corporation · 2005