FET channel having a strained lattice structure along multiple surfaces

In a channel for a field effect transistor, the improvement comprising:

• a channel core defining at least a top and at least one adjoining side surface;
• a channel envelope in contact with the top surface and the at least one side surface;
• a gate oxide disposed on at least two surfaces of the channel envelope, said surfaces of the channel envelope being opposed to the top surface and the at least one side surface;
• wherein the channel core comprises a first semiconductor material and the channel envelope comprises a second semiconductor material, and at least one of the first and second semiconductor materials exhibits one of a stretched and a compressed lattice structure.

A field effect transistor (FET) comprising:

• a channel core coupled to a substrate and defining a top surface spaced from the substrate and opposed sidewall surfaces between the substrate and the top surface, wherein the channel core comprises a first semiconductor material defining a first lattice structure;
• a channel envelope in contact with the opposed sidewall surfaces and the top surface, wherein the channel envelope comprises a second semiconductor material defining a second lattice structure that differs from the first lattice structure;
• a gate oxide disposed about a surface of the channel envelope that is opposite the channel core;
• and
• a gate coupled to the channel core through the gate oxide, said gate disposed at least partially within the substrate.

A field effect transistor (FET) comprising:

• a channel core coupled to a substrate and defining a top surface spaced from the substrate and opposed sidewall surfaces between the substrate and the top surface, wherein the channel core comprises a first semiconductor material defining a first lattice structure;
• a channel envelope in contact with the opposed sidewall surfaces and the top surface, wherein the channel envelope comprises a second semiconductor material defining a second lattice structure that differs from the first lattice structure;
• a gate oxide disposed about a surface of the channel envelope that is opposite the channel core;
• and
• first and second gates coupled to the channel core through the gate oxide, said first and second gates disposed on opposed sides of said channel core and not directly coupled to one another electrically.