H10D 64/017
Using dummy gates in processes wherein at least parts of the final
Official title: {using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes}
H10D64/017 (Using dummy gates in processes wherein at least parts of the final) appears on 14,089 US grants and 17,998 published applications in this corpus.
Search patents in H10D- Granted patents
- 14,089
- Published applications
- 17,998
- Assignees
- 622
- Inventors
- 9,801
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 6 | 0 |
| 1986 | 2 | 0 |
| 1987 | 2 | 0 |
| 1988 | 6 | 0 |
| 1989 | 1 | 0 |
| 1990 | 2 | 0 |
| 1991 | 3 | 0 |
| 1992 | 3 | 0 |
| 1993 | 9 | 0 |
| 1994 | 9 | 0 |
| 1995 | 8 | 0 |
| 1996 | 9 | 0 |
| 1997 | 8 | 0 |
| 1998 | 22 | 0 |
| 1999 | 39 | 0 |
| 2000 | 92 | 0 |
| 2001 | 124 | 40 |
| 2002 | 100 | 102 |
| 2003 | 119 | 77 |
| 2004 | 90 | 103 |
| 2005 | 73 | 161 |
| 2006 | 117 | 156 |
| 2007 | 89 | 173 |
| 2008 | 90 | 163 |
| 2009 | 101 | 169 |
| 2010 | 138 | 149 |
| 2011 | 145 | 220 |
| 2012 | 144 | 333 |
| 2013 | 315 | 453 |
| 2014 | 417 | 528 |
| 2015 | 585 | 817 |
| 2016 | 912 | 973 |
| 2017 | 1007 | 1020 |
| 2018 | 1032 | 1015 |
| 2019 | 1130 | 1211 |
| 2020 | 1200 | 1437 |
| 2021 | 1049 | 1159 |
| 2022 | 944 | 1271 |
| 2023 | 925 | 1628 |
| 2024 | 1064 | 1583 |
| 2025 | 1204 | 2025 |
| 2026 | 751 | 1032 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Contact formation with staggered gate patterning6 Oct 2026US 12,757,441 B2International Business Machines Corporation
- Co-integration of S/D metal contact cut and wrap-around-contact6 Oct 2026US 12,757,445 B2International Business Machines Corporation
- Method for forming semiconductor structure6 Oct 2026US 12,757,456 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device having source/drain pattern including multiple layers with different conductivity type6 Oct 2026US 12,757,458 B2Samsung Electronics Co., Ltd.
- Semiconductor structure and method for manufacturing the same8 Oct 2026US 2026/0313867 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Ferroelectric devices and methods of forming the same8 Oct 2026US 2026/0313911 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure8 Oct 2026US 2026/0313931 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Methods of forming semiconductor devices8 Oct 2026US 2026/0313934 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Multi-gate device fabrication and structures thereof8 Oct 2026US 2026/0313936 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method of cutting metal gate3,322US 9,520,482 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- FINFETs with wrap-around silicide and method forming the same1,436US 9,608,116 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Aligned gate-all-around structure849US 9,412,828 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016