H10D 64/01364
The semiconductor being diamond, semiconducting diamond-like carbon or graphene
Official title: {the semiconductor being diamond, semiconducting diamond-like carbon or graphene}
H10D64/01364 (The semiconductor being diamond, semiconducting diamond-like carbon or graphene) appears on 72 US grants and 68 published applications in this corpus.
Search patents in H10D- Granted patents
- 72
- Published applications
- 68
- Assignees
- 48
- Inventors
- 163
- Latest grant
- 16 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 1 |
| 2008 | 0 | 0 |
| 2009 | 0 | 1 |
| 2010 | 0 | 0 |
| 2011 | 0 | 1 |
| 2012 | 0 | 3 |
| 2013 | 2 | 4 |
| 2014 | 3 | 5 |
| 2015 | 6 | 9 |
| 2016 | 11 | 8 |
| 2017 | 8 | 7 |
| 2018 | 9 | 6 |
| 2019 | 8 | 4 |
| 2020 | 5 | 3 |
| 2021 | 2 | 3 |
| 2022 | 2 | 5 |
| 2023 | 3 | 4 |
| 2024 | 3 | 3 |
| 2025 | 4 | 0 |
| 2026 | 2 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Selective gate oxide formation on 2D material based transistor devices16 Jun 2026US 12,660,272 B2Intel Corporation
- 2D amorphous carbon film assembled from graphene quantum dots14 Apr 2026US 12,600,634 B2United States Department of Energy
- Semiconductor power device and method for producing same11 Nov 2025US 12,469,704 B2Rohm Co., Ltd.
- Diamond field effect transistor and method for producing same28 Oct 2025US 12,457,760 B2Waseda University
- Insulated gate structure, wide bandgap material power device with the same and manufacturing method thereof23 Sep 2025US 12,426,343 B2Hitachi Energy Switzerland AG
- Semiconductor power device and method for producing same5 Feb 2026US 2026/0040644 A1Rohm Co., Ltd.
- Semiconductor power device and method for producing same12 Sep 2024US 2024/0304447 A1Rohm Co., Ltd.
- Selective gate oxide formation on 2d material based transistor devices4 Jul 2024US 2024/0222441 A1Intel Corporation
- Field effect transistor14 Mar 2024US 2024/0088058 A1OOKUMA DIAMOND DEVICE Inc.
- Method for Improving Surface of Semiconductor Device16 Nov 2023US 2023/0369044 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Nanosheet field-effect transistors including a two-dimensional semiconducting material35US 10,388,732 B1Globalfoundries Inc. · 2019
- Metal insulator semiconductor field effect transistor29US 5,196,907 ASiemens Aktiengesellschaft · 1993
- Semiconductor device having a wiring layer including a TISI2, film of the C49 or C54 structure24US 5,801,425 AMitsubishi Denki Kabushiki Kaisha · 1998
- Display device with touch panel17US 8,436,830 B2Hitachi Displays, Ltd. · 2013
- Method of forming a layered wiring structure including titanium silicide16US 6,180,519 B2Mitsubishi Denki Kabushiki Kaisha · 2001