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US 2024/0304447 A1Published application
Semiconductor power device and method for producing same
AssigneeRohm Co., Ltd.
InventorYuki NAKANO
Life of this patent
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Abstract
A method for producing a semiconductor power device includes forming a gate trench from a surface of the semiconductor layer toward an inside thereof. A first insulation film is formed on the inner surface of the gate trench. The method also includes removing a part on a bottom surface of the gate trench in the first insulation film. A second insulation film having a dielectric constant higher than SiO2 is formed in such a way as to cover the bottom surface of the gate trench exposed by removing the first insulation film.
Claims20
A wide bandgap semiconductor device, comprising:
- a semiconductor substrate having a first conductivity type;
- a gate trench disposed over the semiconductor substrate;
- a gate insulating film disposed along a side of the gate trench and a bottom surface of the gate trench, and partly covering a surface of the semiconductor substrate;
- a gate electrode disposed so as to be buried in the gate trench:
- an interlayer insulating film disposed so as to cover the gate electrode and the gate insulating film;
- an intermediate stacked portion disposed over the semiconductor substrate and the interlayer insulating film;
- a metal layer disposed on or over the intermediate stacked portion;
- a first source region having the first conductivity type disposed near the side of the gate trench from a surface of the semiconductor substrate;
- a first body region having a second conductivity type disposed under the first source region, the first body region disposed along the side of the gate trench
- a body contact region electrically connected to the first body region in a cross sectional view;
- and
- a diode region disposed lower than the first body region in a cross sectional view, wherein
- a pn-diode having a pn-junction is disposed in the diode region such that the pn-junction is lower than the bottom surface of the gate trench a width of the diode region is wider than a width of the first body region.
10 more elements
A wide bandgap semiconductor device, comprising:
- a semiconductor substrate having a first conductivity type;
- a gate trench disposed over the semiconductor substrate;
- a gate insulating film disposed along a side and bottom of the gate trench, and at least partially covering a surface of the semiconductor substrate;
- a gate electrode disposed in the gate trench;
- an interlayer insulating film disposed over the gate electrode and the gate insulating film;
- an intermediate stacked portion disposed over the semiconductor substrate and the interlayer insulating film;
- a metal layer disposed on or over the internlediate stacked portion;
- a first source region having the first conductivity type formed from a surface of the
- semiconductor substrate along the side of the gate trench;
- a first body region having a second conductivity type disposed under the first source region and along the side of the gate trench;
- and
- a diode region disposed lower than the first body region in a cross-sectional view, wherein
- a pn-diode having a pn-junction is disposed in the diode region such that the pn-junction is lower than the surface of the gate trench, and
- a width of the diode region is wider than a width of the first body region.
11 more elements
Dependencies are inferred from the claim text.