Semiconductor device having a wiring layer including a TISI2, film of the C49 or C54 structure
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsTakashi Kuroi, Hidekazu Oda
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Abstract
A gate electrode is made up of a polycrystalline silicon film containing phosphorous as a dopant for determining its conductivity type, a titanium silicide film of the C54 structure, and a tungsten silicide film all of which films are laid one on another in said order.
Claims12
A semiconductor device comprising:
- a wiring layer that includes a non-single-crystal silicon film containing a dopant for determining a conductivity type of the non-single-crystal silicon film;
- a titanium silicide film of a C49 and/or C54 structure as a dopant barrier layer;
- and a metal silicide film, other than titanium silicide, all of which films are substantially laid one on another so that the pattern edges match each other, wherein the titanium silicide film comprises titanium silicide obtained by reaction of a titanium layer with silicon in the non-single-crystal silicon film accompanied with reducing reaction of a native oxide layer on the non-single-crystal silicon film, forming a first interface between the non-single-crystal silicon film and the titanium silicide film, and a second interface between the metal silicide film and the titanium silicide film which are substantially free of a native oxide film.
A dual gate CMOS semiconductor device comprising:
- a first gate electrode including a first non-single-crystal silicon film containing a first dopant for determining a conductivity type of the first non-single-crystal silicon film, a first titanium silicide film of a C49 and/or C54 structure, and a first metal silicide film, other than titanium silicide, all of which films are substantially laid one on another;
- and
- a second gate electrode including a second non-single-crystal silicon film containing a second dopant for determining a conductivity type of the second non-single-crystal silicon film, a second titanium silicide film of the C49 and/or C54 structure as a dopant barrier layer;
- and a second metal silicide film, other than titanium silicide, all of which films are substantially laid one on another so that the pattern edges match each other wherein, both the first and second titanium silicide film comprise titanium silicide obtained by reaction of a titanium layer with silicon in the non-single-crystal silicon film accompanied with reducing reaction of a native oxide layer on each of the first and second non-single-crystal silicon films, forming a first interface between each of the first and second non-single-crystal silicon films and the titanium silicide film, and a second interface between each of the metal silicide films and the titanium silicide film which are substantially free of a native oxide film.
A semiconductor device comprising source/drain region and a gate electrode formed on a gate oxide film on a substrate, the gate electrode that includes a non-single-crystal silicon film containing a dopant for determining a conductivity type of the non-single-crystal silicon film, a titanium silicide film of a C49 and/or C54 structure as a dopant barrier layer, and a metal silicide film, other than titanium silicide, all of which films are substantially laid one on another so that the pattern edges match each other, wherein the titanium silicide film comprises the titanium silicide obtained by reaction of a titanium layer with silicon in the non-single-crystal silicon film accompanied with reducing reaction of a native oxide layer formed on the non-single-crystal silicon film, forming a first interface between the non-single-crystal silicon film and the titanium silicide film, and a second interface between the metal silicide film and the titanium silicide film which are free from a native oxide film.
Dependencies are inferred from the claim text.