Diamond field effect transistor and method for producing same

A method for producing a diamond field effect transistor, the method comprising:

• forming a gate insulating film including a silicon oxide film on a surface of a first diamond layer;
• forming a source region and a drain region on the surface of the first diamond layer;
• forming a gate electrode on the gate insulating film;
• and
• forming a silicon-terminated layer containing C—Si bonds formed of bonds between carbon atoms and silicon atoms at an interface between the first diamond layer and the silicon oxide film, wherein
• forming the source region and the drain region on the surface of the first diamond layer includes removing a part of the silicon oxide film to expose a part of the surface of the first diamond layer, and selectively epitaxially growing a second diamond layer on the exposed surface of the first diamond layer, and
• wherein the method further comprises:
• forming a silicon-terminated layer including C—Si bonds formed of bonds between carbon atoms and silicon atoms at an interface between the second diamond layer and the silicon oxide film, wherein
• forming the silicon-terminated layer containing the C—Si bonds at the interface between the first diamond layer and the silicon oxide film, forming the silicon-terminated layer containing the C—Si bonds at the interface between the second diamond layer and the silicon oxide film, and selectively epitaxially growing the second diamond layer on the exposed surface of the first diamond layer, are performed simultaneously by a plasma treatment in the same reducing atmosphere.

A method for producing a diamond field effect transistor, the method comprising:

• forming a gate insulating film including a silicon oxide film on a surface of a first diamond layer;
• forming a source region and a drain region on the surface of the first diamond layer;
• forming a gate electrode on the gate insulating film;
• and
• forming a silicon-terminated layer containing C—Si bonds formed of bonds between carbon atoms and silicon atoms at an interface between the first diamond layer and the silicon oxide film, wherein
• forming the source region and the drain region on the surface of the first diamond layer includes removing a part of the silicon oxide film to expose a part of the surface of the first diamond layer, and selectively epitaxially growing a second diamond layer on the exposed surface of the first diamond layer, and
• wherein the method further comprises:
• forming a source electrode and a drain electrode on surfaces of the second diamond layers respectively connected thereto at predetermined intervals from end portions of the silicon oxide film, and forming a hydrogen-terminated layer containing C—H bonds formed of bonds between carbon atoms and hydrogen atoms on the surface of the second diamond layer at least within the predetermined interval.