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US 5,196,907 AGranted
Metal insulator semiconductor field effect transistor
AssigneeSiemens Aktiengesellschaft
InventorsSiegfried Birkle, Johann Kammermaier
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Abstract
A Metal Insulator Semiconductor Field-Effect Transistor (MISFET) has an insulating layer arranged between a gate electrode and a semiconductor substrate. The insulating layer is a layer of amorphous, hydrogenated carbon (a-C:H) with a thickness--in the region of the gate electrode--of up to 1 .mu.m, and with a resistivity (.eta.) greater than or equal to 10.sup.6 .OMEGA..multidot.cm at the boundary surface to the semiconductor substrate. The semiconductor substrate consists of a semiconductor material other than silicon.
Claims20
A metal insulator semiconductor field-effect transistor (MISFET) comprising:
- a) a gate electrode;
- b) a semiconductor substrate composed of a semiconductor material other than silicon;
- and
- c) an insulating layer disposed between said gate electrode and said semiconductor substrate, composed of amorphous, hydrogenated carbon (a-C:H), having a thickness in the region of the gate electrode less than or equal to 1 .mu.m, and having a boundary surface to the semiconductor substrate with a resistivity (.rho.) of greater than or equal to 10.sup.6 .OMEGA..multidot.cm.
1 more element
Dependencies are inferred from the claim text.