Insulated gate structure, wide bandgap material power device with the same and manufacturing method thereof
AssigneeHitachi Energy Switzerland AG
InventorsLars Knoll, Stephan Wirths, Andrei Mihaila
Life of this patent
Estimating the term…
Abstract
An insulated gate structure includes a wide bandgap material layer having a channel region of a first conductivity type. A gate insulating layer is arranged directly on the channel region and has a first nitride layer that is arranged directly on the channel region. The gate insulating layer has a concentration of carbon atoms that is less than 1018 atoms/cm−3 at a distance of 3 nm from an interface between the wide bandgap material layer and the first nitride layer. An electrically conductive gate electrode layer overlies the gate insulating layer so that the gate electrode layer is separated from the wide bandgap material layer by the gate insulating layer.
Claims20
An insulated gate structure comprising:
- a wide bandgap material layer comprising a channel region of a first conductivity type;
- a gate insulating layer arranged directly on the channel region, the gate insulating layer comprising a first nitride layer that is arranged directly on the channel region, wherein the gate insulating layer has a concentration of carbon atoms that is less than 1018 atoms/cm−3 at a distance of 3 nm from an interface between the wide bandgap material layer and the first nitride layer and wherein the first nitride layer comprises a stoichiometric silicon nitride layer, an aluminum nitride layer, a boron nitride layer or a phosphorous nitride layer;
- and
- an electrically conductive gate electrode layer over the gate insulating layer so that the gate electrode layer is separated from the wide bandgap material layer by the gate insulating layer.
A wide bandgap material power device comprising:
- a wide bandgap material layer comprising a channel region of a first conductivity type and a source region and a drain region of a second conductivity different than the first conductivity type, the source region spaced from the drain region by the channel region;
- a gate insulating layer arranged directly on the channel region, the gate insulating layer comprising a first nitride layer that is arranged directly on the channel region, wherein the gate insulating layer has a concentration of carbon atoms that is less than 1018 atoms/cm−3 at a distance of 3 nm from an interface between the wide bandgap material layer and the first nitride layer and wherein the first nitride layer comprises a stoichiometric silicon nitride layer, an aluminum nitride layer, a boron nitride layer or a phosphorous nitride layer;
- and
- an electrically conductive gate electrode layer over the gate insulating layer so that the gate electrode layer is separated from the wide bandgap material layer by the gate insulating layer.
A method for manufacturing an insulated gate structure, the method comprising:
- forming a gate insulating layer arranged directly on a channel region of a wide bandgap material layer, the gate insulating layer comprising a first nitride layer that is arranged directly on the channel region, wherein the gate insulating layer has a concentration of carbon atoms that is less than 1018 atoms/cm−3 at a distance of 3 nm from an interface between the wide bandgap material layer and the first nitride layer and wherein the first nitride layer comprises a stoichiometric silicon nitride layer, an aluminum nitride layer, a boron nitride layer or a phosphorous nitride layer;
- and
- forming an electrically conductive gate electrode layer over the gate insulating layer.
Dependencies are inferred from the claim text.