H10D 62/021
Forming source or drain recesses by etching e.g. recessing by etching and
Official title: {Forming source or drain recesses by etching e.g. recessing by etching and then refilling}
H10D62/021 (Forming source or drain recesses by etching e.g. recessing by etching and) appears on 3,781 US grants and 4,284 published applications in this corpus.
Search patents in H10D- Granted patents
- 3,781
- Published applications
- 4,284
- Assignees
- 308
- Inventors
- 4,032
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 4 | 0 |
| 1990 | 3 | 0 |
| 1991 | 5 | 0 |
| 1992 | 2 | 0 |
| 1993 | 3 | 0 |
| 1994 | 4 | 0 |
| 1995 | 2 | 0 |
| 1996 | 8 | 0 |
| 1997 | 10 | 0 |
| 1998 | 17 | 0 |
| 1999 | 14 | 0 |
| 2000 | 20 | 0 |
| 2001 | 15 | 8 |
| 2002 | 27 | 25 |
| 2003 | 28 | 23 |
| 2004 | 24 | 33 |
| 2005 | 34 | 94 |
| 2006 | 60 | 155 |
| 2007 | 59 | 188 |
| 2008 | 101 | 239 |
| 2009 | 138 | 194 |
| 2010 | 166 | 161 |
| 2011 | 167 | 166 |
| 2012 | 157 | 237 |
| 2013 | 207 | 249 |
| 2014 | 233 | 219 |
| 2015 | 236 | 293 |
| 2016 | 312 | 306 |
| 2017 | 275 | 237 |
| 2018 | 261 | 199 |
| 2019 | 215 | 224 |
| 2020 | 218 | 223 |
| 2021 | 145 | 176 |
| 2022 | 169 | 197 |
| 2023 | 137 | 132 |
| 2024 | 129 | 124 |
| 2025 | 130 | 102 |
| 2026 | 42 | 80 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Method of manufacturing FinFET devices with backside power rail and backside self-aligned via25 Aug 2026US 12,720,795 B2Taiwan Semiconductor Manfacturing Company, Ltd.
- Semiconductor device and method for forming the same11 Aug 2026US 12,707,678 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device and manufacturing method thereof8 Oct 2026US 2026/0313901 A1Taiwan Semiconductor Manufacturing Company.Ltd
- FINFET Devices with Backside Power Rail and Backside Self-Aligned Via8 Oct 2026US 2026/0313945 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method for forming the same8 Oct 2026US 2026/0313969 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Doping profile for strained source/drain region8 Oct 2026US 2026/0313975 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor Device and Method of Manufacturing24 Sep 2026US 2026/0293202 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Contact structure of semiconductor device1,648US 9,105,490 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Strained structure of semiconductor device and method of making the strained structure614US 9,171,929 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Cyclical epitaxial deposition and etch580US 8,367,528 B2ASM America, Inc. · 2013
- Strained channel integrated circuit devices569US 8,729,627 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014