H10D 48/40
Devices controlled by magnetic fields
H10D48/40 (Devices controlled by magnetic fields) appears on 509 US grants and 558 published applications in this corpus.
Search patents in H10D- Granted patents
- 509
- Published applications
- 558
- Assignees
- 152
- Inventors
- 869
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 3 | 0 |
| 1978 | 2 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 3 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 2 | 0 |
| 1988 | 0 | 0 |
| 1989 | 3 | 0 |
| 1990 | 3 | 0 |
| 1991 | 3 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 4 | 0 |
| 1999 | 4 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 1 |
| 2003 | 1 | 5 |
| 2004 | 3 | 3 |
| 2005 | 3 | 4 |
| 2006 | 2 | 7 |
| 2007 | 6 | 7 |
| 2008 | 3 | 6 |
| 2009 | 6 | 9 |
| 2010 | 2 | 11 |
| 2011 | 8 | 10 |
| 2012 | 12 | 24 |
| 2013 | 19 | 40 |
| 2014 | 38 | 50 |
| 2015 | 34 | 29 |
| 2016 | 29 | 21 |
| 2017 | 28 | 26 |
| 2018 | 29 | 31 |
| 2019 | 29 | 53 |
| 2020 | 34 | 51 |
| 2021 | 43 | 48 |
| 2022 | 38 | 36 |
| 2023 | 29 | 27 |
| 2024 | 32 | 27 |
| 2025 | 24 | 21 |
| 2026 | 17 | 11 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Magnetic memory device having magnetic tunnel junction patterns and spin-orbit torque lines22 Sep 2026US 12,744,068 B2Samsung Electronics Co., Ltd.
- Arithmetic device18 Aug 2026US 12,710,922 B2YODA-S, Inc.
- Semiconductor device, storage device, and electronic device with first and second metal oxide channel transistors9 Jun 2026US 12,652,962 B2Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor device and method of manufacturing semiconductor device26 May 2026US 12,641,809 B2Fuji Electric Co., Ltd.
- Magnetoresistance effect element and magnetic recording array for enhanced integration density19 May 2026US 12,633,331 B2TDK Corporation
- Semiconductor Quantum Dot Device and Fabrication Method, Signal Reading Method and Manipulation Method Therefor13 Aug 2026US 2026/0239677 A1Origin Quantum Computing Technology (Hefei) Co., Ltd
- Magnetoresistive effect element and magnetic memory device6 Aug 2026US 2026/0231433 A1The University of Tokyo
- Multilayer body, element including the multilayer body, and method of producing the multilayer body30 Jul 2026US 2026/0221957 A1Japan Science and Technology Agency
- Magneto-resistive element and method of manufacturing the magneto-resistive element23 Jul 2026US 2026/0215163 A1TDK Corporation
- Magnetic memory element, magnetic memory device, photonic spin register, data writing method, data reading method, apparatus, and information processing system2 Apr 2026US 2026/0096351 A1The University of Tokyo
Most cited
By later US patents
- High speed low power annular magnetic devices based on current induced spin-momentum transfer174US 7,307,876 B2New York University · 2007
- High speed low power magnetic devices based on current induced spin-momentum transfer161US 6,980,469 B2New York University · 2005
- High speed low power magnetic devices based on current induced spin-momentum transfer141US 7,170,778 B2New York University · 2007
- Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM78US 8,860,156 B2Headway Technologies, Inc. · 2014
- Magnetic field sensor64US 4,607,271 AIGZ Landis & Gyr Zug AG · 1986