Back to results
US 2026/0096351 A1Published application
Magnetic memory element, magnetic memory device, photonic spin register, data writing method, data reading method, apparatus, and information processing system
AssigneeThe University of Tokyo
InventorsSatoru Nakatsuji, Tomoya Higo
Life of this patent
Estimating the term…
Abstract
A magnetic memory element includes an antiferromagnetic layer that is polycrystalline and made of an antiferromagnet exhibiting an anomalous Hall effect. A magnetic order of the antiferromagnet is reversible. The antiferromagnetic layer includes one or more first grains having an average diameter ranging from 20 nm to 200 nm, and a plurality of second grains are present inside at least one of the one or more first grains.
Claims19
A magnetic memory element, comprising:
- an antiferromagnetic layer that is polycrystalline and made of an antiferromagnet exhibiting an anomalous Hall effect, wherein
- a magnetic order of the antiferromagnet is reversible,
- the antiferromagnetic layer includes one or more first grains having an average diameter ranging from 20 nm to 200 nm, and
- a plurality of second grains are present inside at least one of the one or more first grains.
1 more element
Dependencies are inferred from the claim text.