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US 2026/0221957 A1Published application
Multilayer body, element including the multilayer body, and method of producing the multilayer body
AssigneeJapan Science and Technology Agency
InventorsShinya YAMADA, Kohei HAMAYA, Takamasa USAMI, Tomoyasu TANIYAMA, Sachio KOMORI
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Abstract
A multilayer body, an element including the multilayer body, and a method of producing the multilayer body are provided. A multilayer body includes a piezoelectric layer made of a crystal of an oxide having piezoelectricity, a metal layer, and a magnetic layer made of a crystal of a Heusler alloy, which is a ferromagnetic material. The piezoelectric layer, the metal layer, and the magnetic layer are stacked in this order.
Claims19
A multilayer body comprising:
- a piezoelectric layer made of a crystal of an oxide having piezoelectricity;
- a metal layer;
- and
- a magnetic layer made of a crystal of a Heusler alloy that is a ferromagnetic material,
- wherein the piezoelectric layer, the metal layer, and the magnetic layer are stacked in this order.
2 more elements
An element comprising:
- a piezoelectric layer made of a crystal of an oxide having piezoelectricity;
- a metal layer;
- and
- a magnetic layer made of a crystal of a Heusler alloy that is a ferromagnetic material,
- wherein
- the piezoelectric layer, the metal layer, and the magnetic layer are stacked in this order,
- the metal layer has
- a thickness of 10 nm or more and 40 nm or less, and
- an average content of oxygen of 5 at % or less, and
- the piezoelectric layer has an average content of a metal element constituting the metal layer of 5 at % or less, within a range of 10 nm from an interface with the metal layer.
7 more elements
A method of producing a multilayer body comprising:
- a metal layer formation process in which a metal layer is formed on or above a piezoelectric layer made of a crystal of an oxide having piezoelectricity;
- and
- a magnetic layer formation process in which a magnetic layer made of a crystal of a Heusler alloy that is a ferromagnetic material is formed on or above the metal layer,
- wherein in the magnetic layer formation process,
- by molecular beam epitaxy,
- the magnetic layer is formed at a growth temperature of 80° C. or more and 450° C. or less.
3 more elements
Dependencies are inferred from the claim text.