Magnetoresistive effect element and magnetic memory device
AssigneeThe University of Tokyo
InventorsSatoru Nakatsuji, Tomoya Higo
Life of this patent
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Abstract
A magnetoresistance element includes: a free layer made of an antiferromagnet; a non-magnetic layer stacked on the free layer; a pinned layer stacked on the non-magnetic layer and made of an antiferromagnet; and a pinning layer stacked on the pinned layer and made of a magnetic material that is magnetically harder than the pinned layer.
Claims15
A magnetoresistance element, comprising:
- a free layer made of an antiferromagnet;
- a non-magnetic layer stacked on the free layer;
- a pinned layer stacked on the non-magnetic layer and made of an antiferromagnet;
- and
- a pinning layer stacked on the pinned layer and made of a magnetic material that is magnetically harder than the pinned layer.
A magnetic memory device, comprising:
- a free layer made of an antiferromagnet;
- a non-magnetic layer stacked on the free layer;
- a pinned layer stacked on the non-magnetic layer and made of an antiferromagnet;
- a pinning layer stacked on the pinned layer and made of a magnetic material that is magnetically harder than the pinned layer;
- and
- a spin Hall layer that is in contact with the free layer and configured to exhibit a spin Hall effect when an electric current flows through the spin Hall layer parallel to an interface with the free layer.
A magnetic memory device, comprising:
- a free layer made of an antiferromagnet;
- a non-magnetic layer stacked on the free layer;
- a pinned layer stacked on the non-magnetic layer and made of an antiferromagnet;
- a pinning layer stacked on the pinned layer and made of a magnetic material that is magnetically harder than the pinned layer;
- and
- a pair of electrode terminals configured to introduce an electric current into the free layer in an out-of-plane direction.
A magnetoresistance element, comprising:
- a pinned layer made of an antiferromagnet;
- and
- a pinning layer that is magnetically harder than the pinned layer.
A magnetoresistance element, comprising:
- a free layer made of an antiferromagnet;
- a non-magnetic layer stacked on the free layer;
- a pinned layer stacked on the non-magnetic layer and made of a ferromagnet;
- and
- a pinning layer stacked on the pinned layer and made of a magnetic material that is magnetically harder than the ferromagnet of the pinned layer.
A method of controlling a magnetic memory device, the magnetic memory device comprising:
- a free layer made of an antiferromagnet;
- a non-magnetic layer stacked on the free layer;
- a pinned layer stacked on the non-magnetic layer and made of an antiferromagnet;
- and a pinning layer stacked on the pinned layer and made of a magnetic material that is magnetically harder than the pinned layer, the method comprising:
- manipulating a magnetic order in the free layer due to spin torque.
A method of controlling a magnetic memory device, the magnetic memory device comprising:
- a free layer made of an antiferromagnet;
- a non-magnetic layer stacked on the free layer;
- a pinned layer stacked on the non-magnetic layer and made of an antiferromagnet;
- a pinning layer stacked on the pinned layer and made of a magnetic material that is magnetically harder than the pinned layer;
- and a spin Hall layer that is in contact with the free layer and configured to exhibit a spin Hall effect when an electric current flows through the spin Hall layer parallel to an interface with the free layer, the method comprising:
- reversing a magnetic order in the free layer due to spin-orbit torque induced by the spin Hall effect.
A method of controlling a magnetic memory device, the magnetic memory device comprising:
- a free layer made of an antiferromagnet;
- a non-magnetic layer stacked on the free layer;
- a pinned layer stacked on the non-magnetic layer and made of an antiferromagnet;
- and a pinning layer stacked on the pinned layer and made of a magnetic material that is magnetically harder than the pinned layer, the method comprising:
- causing a write current to flow through the free layer in an out-of-plane direction, thereby reversing a magnetic order in the free layer due to spin-transfer torque.
Dependencies are inferred from the claim text.