Magnetic field sensor
AssigneeIGZ Landis & Gyr Zug AG
InventorsRadivoje Popovic, Jean-Luc Berchier, Gernot Schneider, Heinz Lienhard, Heinrich P. Baltes, Katalin Solt, Tomislav Zajc
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Abstract
The magnetic field sensor is composed of a semiconductor magnetic field sensor, for example a magnetotransistor, and at least one NiFe or NiCo film disposed upon its surface. This film functions as a zero-crossing switch utilizing its magnetic induction/magnetic field-reversal hysteresis properties. The film is deposited immediately above the field sensitive zone of the magnetic field sensor with its easy axis oriented perpendicularly to the direction of current flow of the sensor. The semiconductor magnetic field sensor detects the magnetic induction generated by the film.
Claims10
A sensor for detecting field reversals in a magnetic field comprising:
- a magnetic field sensitive semiconductor device,
- a thin film comprising nife or nico which functions as a magnet formed on a surface of said magnetic field sensitive semiconductive device, said film having a direction of magnetization which is capable of reversal in response to said field reversals of said magnetic field, said film being free of any electrical contacts thereto so that substantially no electrical current flows in said film,
- said magnetic field sensitive semiconductor device being adapted to produce an electrical signal in response to reversals in the direction of magnetization of said film.
Dependencies are inferred from the claim text.